Influence of near-surface graded-gap layers on electrical characteristics of MIS-structures based on MBE grown HgCdTe

2010 ◽  
Vol 18 (3) ◽  
Author(s):  
A.V. Voitsekhovskii ◽  
S.N. Nesmelov ◽  
S.M. Dzyadukh ◽  
V.S. Varavin ◽  
S.A. Dvoretskii ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Space Charge Region ◽  
Molecular Beam ◽  
Differential Resistance ◽  
Anodic Oxide ◽  
Electrical Characteristics ◽  
Near Surface ◽  
Wide Range ◽  
Minority Carriers ◽  
Mis Structures

AbstractThe paper examines influence of near-surface graded-gap layers on electrical characteristics of MIS-structures fabricated on heteroepitaxial Hg1−xCdxTe films grown by molecular beam epitaxy (MBE). Two types of insulators, i.e., two-layer SiO2/Si3N4 and anodic oxide films were used. As it is seen from the depth and width of the valley on the C-V characteristics, the capacitance is found to vary in a wide range, in contrast to the structures without graded-gap layers. It is shown that the graded-gap layer under MIS-structures with x = 0.22 effectively reduces the tunnelling generation via deep levels and increases a lifetime of minority carriers in the space charge region and its differential resistance. The properties of the HgCdTe-insulator interfaces are studied.

scholarly journals Влияние имплантации ионов As-=SUP=-+-=/SUP=- и последующего отжига на электрические свойства приповерхностных слоев варизонных пленок n-Hg-=SUB=-0.78-=/SUB=-Cd-=SUB=-0.22-=/SUB=-Te

2021 ◽  
Vol 47 (4) ◽  
pp. 33
Author(s):  
А.В. Войцеховский ◽  
С.Н. Несмелов ◽  
С.М. Дзядух ◽  
В.С. Варавин ◽  
С.А. Дворецкий ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Interface States ◽  
Surface Layers ◽  
Metal Insulator ◽  
Near Surface ◽  
Metal Insulator Semiconductor ◽  
Wide Gap ◽  
Mis Structures

Films of n-Hg0.775Cd0.225Te with near-surface wide-gap layers were grown by molecular beam epitaxy on Si (013) substrates. To measure the admittance, metal – insulator – semiconductor (MIS) structures were fabricated on the basis of the as-grown HgCdTe film, films after implantation, and films after implantation and annealing. Using techniques that take into account the presence of graded-gap layers and slow interface states, the main parameters of the near-surface layers of HgCdTe films have been determined after the technological procedures used to create photodiodes.

Near-Surface Aggregation of Sn In Heavily Sn-Doped GaAs Films Grown By Molecular Beam Epitaxy

1985 ◽  
Vol 43 ◽  
pp. 368-369
Author(s):  
S. H. Chen
Keyword(s):  
Molecular Beam Epitaxy ◽  
Cross Section ◽  
Electron Spectroscopy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Secondary Ion Mass Spectrometry ◽  
Specimen Preparation ◽  
Near Surface ◽  
Gaas Films ◽  
Secondary Ion

Sn has been used extensively as an n-type dopant in GaAs grown by molecular-beam epitaxy (MBE). The surface accumulation of Sn during the growth of Sn-doped GaAs has been observed by several investigators. It is still not clear whether the accumulation of Sn is a kinetically hindered process, as proposed first by Wood and Joyce, or surface segregation due to thermodynamic factors. The proposed donor-incorporation mechanisms were based on experimental results from such techniques as secondary ion mass spectrometry, Auger electron spectroscopy, and C-V measurements. In the present study, electron microscopy was used in combination with cross-section specimen preparation. The information on the morphology and microstructure of the surface accumulation can be obtained in a fine scale and may confirm several suggestions from indirect experimental evidence in the previous studies.

Electrical characteristics of GaAs grown on (Ca,Sr)F2 by molecular beam epitaxy

1987 ◽  
Vol 81 (1-4) ◽  
pp. 547-551 ◽  
Author(s):  
C. Fontaine ◽  
M. Berrabah ◽  
J. Nejjar ◽  
A. Munoz-Yague
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electrical Characteristics

Influence of composition of the near-surface graded-gap layer on the admittance of metal-insulator-semiconductor structures based on graded-gap MBE n-Hg1−xCdxTe in wide temperature range

2014 ◽  
Vol 22 (4) ◽  
Author(s):  
A. Voitsekhovskii ◽  
S. Nesmelov ◽  
S. Dzyadukh
Keyword(s):  
Wide Temperature Range ◽  
Temperature Drop ◽  
Differential Resistance ◽  
Near Surface ◽  
Temperature Range ◽  
Strong Inversion ◽  
Capacitance Voltage ◽  
Film Bulk ◽  
Temperature Dependences ◽  
Mis Structures

AbstractInfluence of the CdTe content in a near-surface graded-gap layer on the admittance of MIS-structures fabricated on the basis of heteroepitaxial Hg1−xCdxTe (x = 0.22–0.23 and 0.31–0.32) films grown by molecular beam epitaxy was investigated in a wide temperature range. It is shown that a temperature drop from 77 K to 8 K results in a decrease of hysteresis of the capacitance-voltage (C-V) characteristics and a decrease of frequencies which corresponds to a high-frequency behaviour of C-V characteristics of MIS-structures based on n-HgCdTe (x = 0.22–0.23) with and without graded-gap layersand also for MIS-structures based on n-HgCdTe (x = 0.31–0.32). Temperature dependences of the resistance of the epitaxial film bulk and differential resistance of the space-charge region (SCR) in strong inversion mode were studied. The experimental results can be explained by the fact that for MIS-structures based on n-HgCdTe (x = 0.22–0.23) with the graded-gap layers and for MIS-structures based on n-HgCdTe (x = 0.31–0.32), the differential resistance of SCR is limited by Shockley-Read generation at 25–77 K. Differential resistance of SCR for MIS-structures based on n-HgCdTe (x = 0.22–0.23) without the graded-gap layers is limited by tunnelling through deep levels at 8–77 K.

Optical and electrical characteristics of Mn-doped InN grown by plasma-assisted molecular beam epitaxy

2011 ◽  
Vol 209 (1) ◽  
pp. 95-99 ◽  
Author(s):  
Jessica H. Chai ◽  
Young-Wook Song ◽  
Roger J. Reeves ◽  
Steven M. Durbin
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electrical Characteristics ◽  
Mn Doped
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