Terahertz emission characteristics of ErAs:InGaAs-based photoconductive antennas excited at 1.55 μm

2010 ◽  
Vol 96 (14) ◽  
pp. 141108 ◽  
Author(s):  
A. Schwagmann ◽  
Z.-Y. Zhao ◽  
F. Ospald ◽  
H. Lu ◽  
D. C. Driscoll ◽  
...  
2021 ◽  
Author(s):  
Hannah Bardolaza ◽  
Alexander De Los Reyes ◽  
Neil Irvin Cabello ◽  
John Paul Ferrolino ◽  
Ivan Cedrick Verona ◽  
...  

Author(s):  
Neil Irvin Cabello ◽  
Alexander De Los Reyes ◽  
Vladimir Sarmiento ◽  
John Paul Ferrolino ◽  
Victor DC Andres Vistro ◽  
...  

2010 ◽  
Vol 32 (7) ◽  
pp. 776-779 ◽  
Author(s):  
Satoru Takatori ◽  
Pham Hong Minh ◽  
Elmer Estacio ◽  
Marilou Cadatal-Raduban ◽  
Tomoharu Nakazato ◽  
...  

2017 ◽  
Vol 17 (4) ◽  
pp. 522-526 ◽  
Author(s):  
Alexander De Los Reyes ◽  
Elizabeth Ann Prieto ◽  
Karim Omambac ◽  
Jeremy Porquez ◽  
Lorenzo Lopez ◽  
...  

2012 ◽  
Vol 500 ◽  
pp. 66-69 ◽  
Author(s):  
Hikari Dezaki ◽  
Meng Long Jing ◽  
Sundararajan Balasekaran ◽  
Tadao Tanabe ◽  
Yutaka Oyama

An efficient continuous wave (CW) THz source working at nominal room temperature is described. Optically pumped room temperature THz emission is observed from various kinds of semiconductor bulk crystals. In order to investigate the emission mechanism, temperature dependences of terahertz emission intensity in various semiconductors are measured. Semiconductor samples used are InSb, InSb:Ge, InAs, GaSb, Ge, and Si. From these results, it is shown that the temperature dependences of emission characteristics are different between direct and indirect transition semiconductors, and that the high resistive Ge is suitable for room temperature THz emitter via intracenter transitions excited by IR pump lasers.


2007 ◽  
Vol 15 (14) ◽  
pp. 8943 ◽  
Author(s):  
J. Mangeney ◽  
N. Chimot ◽  
L. Meignien ◽  
N. Zerounian ◽  
P. Crozat ◽  
...  

2017 ◽  
Vol 917 ◽  
pp. 062060
Author(s):  
S I Lepeshov ◽  
A A Gorodetsky ◽  
N A Toropov ◽  
T A Vartanyan ◽  
E U Rafailov ◽  
...  

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