Positron‐annihilation study of vacancy defects in GaAs liquid‐phase epitaxial layers

Journal of Applied Physics ◽

10.1063/1.339434 ◽

1987 ◽

Vol 62 (6) ◽

pp. 2585-2586

Author(s):

Xiang‐Zheng Tu

Keyword(s):

Liquid Phase ◽

Positron Annihilation ◽

Epitaxial Layers ◽

Vacancy Defects ◽

Liquid Phase Epitaxial ◽

Positron Annihilation Study

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Properties of heavily impurity-doped PbSnTe liquid-phase epitaxial layers grown by the temperature difference method under controlled Te vapor pressure

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2017.04.010 ◽

2017 ◽

Vol 470 ◽

pp. 37-41

Author(s):

Arata Yasuda ◽

Yatsuhiro Takahashi ◽

Ken Suto ◽

Jun-ichi Nishizawa

Keyword(s):

Liquid Phase ◽

Vapor Pressure ◽

Temperature Difference ◽

Difference Method ◽

Epitaxial Layers ◽

Liquid Phase Epitaxial ◽

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Preparation of Efficient Electroluminescent Diodes from p‐on‐n Liquid‐Phase Epitaxial Layers of GaP

Journal of Applied Physics ◽

10.1063/1.1656665 ◽

1968 ◽

Vol 39 (6) ◽

pp. 2747-2749 ◽

Author(s):

K. K. Shih ◽

M. R. Lorenz ◽

L. M. Foster

Keyword(s):

Liquid Phase ◽

Epitaxial Layers ◽

Liquid Phase Epitaxial

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Depth profiling of vacancy defects and their thermal stability in N-implanted Si: a positron annihilation study

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/43/32/325401 ◽

2010 ◽

Vol 43 (32) ◽

pp. 325401 ◽

Author(s):

C Varghese Anto ◽

S Abhaya ◽

P Magudapathy ◽

G Amarendra ◽

K G M Nair

Keyword(s):

Thermal Stability ◽

Positron Annihilation ◽

Depth Profiling ◽

Vacancy Defects ◽

Positron Annihilation Study

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Liquid Phase Epitaxial Silicon Diodes: N‐Epitaxial Layers on Boron‐Doped Substrates

Journal of The Electrochemical Society ◽

10.1149/1.2129840 ◽

1980 ◽

Vol 127 (5) ◽

pp. 1168-1172 ◽

Author(s):

B. Jayant Baliga

Keyword(s):

Liquid Phase ◽

Epitaxial Layers ◽

Epitaxial Silicon ◽

Liquid Phase Epitaxial ◽

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Control of Hole Concentration in Liquid-Phase Epitaxial Layers of PbTe by As Doping

Journal of Electronic Materials ◽

10.1007/bf02657081 ◽

1979 ◽

Vol 8 (5) ◽

pp. 603-617 ◽

Author(s):

M. G. Astles ◽

C. Pickering ◽

M. L. Young

Keyword(s):

Liquid Phase ◽

Hole Concentration ◽

Epitaxial Layers ◽

Liquid Phase Epitaxial ◽

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Zero-phonon line in photoluminescence spectra of AlxGa1−xP liquid-phase epitaxial layers

Journal of Luminescence ◽

10.1016/s0022-2313(99)00522-0 ◽

2000 ◽

Vol 87-89 ◽

pp. 1224-1227 ◽

Author(s):

T.J Yu ◽

K Suto ◽

J Nishizawa

Keyword(s):

Liquid Phase ◽

Epitaxial Layers ◽

Photoluminescence Spectra ◽

Zero Phonon Line ◽

Liquid Phase Epitaxial ◽

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ChemInform Abstract: LIQUID PHASE EPITAXIAL SILICON DIODES: N-EPITAXIAL LAYERS ON BORON-DOPED SUBSTRATES

Chemischer Informationsdienst ◽

10.1002/chin.198035008 ◽

1980 ◽

Vol 11 (35) ◽

Author(s):

B. J. BALIGA

Keyword(s):

Liquid Phase ◽

Epitaxial Layers ◽

Epitaxial Silicon ◽

Liquid Phase Epitaxial ◽

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Anomalous Hall effect inp‐type Hg1−xCdxTe liquid‐phase‐epitaxial layers

Journal of Applied Physics ◽

10.1063/1.339570 ◽

1987 ◽

Vol 62 (5) ◽

pp. 1861-1868 ◽

Author(s):

A. Zemel ◽

Ariel Sher ◽

D. Eger

Keyword(s):

Liquid Phase ◽

Hall Effect ◽

Anomalous Hall Effect ◽

Epitaxial Layers ◽

Liquid Phase Epitaxial

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Dopant Distribution in Silicon Liquid Phase Epitaxial Layers: Meltback Effects

Journal of The Electrochemical Society ◽

10.1149/1.2128970 ◽

1979 ◽

Vol 126 (1) ◽

pp. 138-143 ◽

Author(s):

B. Jayant Baliga

Keyword(s):

Liquid Phase ◽

Epitaxial Layers ◽

Dopant Distribution ◽

Liquid Phase Epitaxial

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Composition-Modulated Structures in InGaAsP and InGaP Liquid Phase Epitaxial Layers Grown on (001) GaAs Substrates

Japanese Journal of Applied Physics ◽

10.1143/jjap.23.l241 ◽

1984 ◽

Vol 23 (Part 2, No. 4) ◽

pp. L241-L243 ◽

Author(s):

Osamu Ueda ◽

Shoji Isozumi ◽

Satoshi Komiya

Keyword(s):

Liquid Phase ◽

Epitaxial Layers ◽

Liquid Phase Epitaxial ◽

Gaas Substrates ◽

Modulated Structures

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