AlGaInP/GaInP double-heterostructure orange light-emitting diodes on GaAsP substrates prepared by metalorganic vapor-phase epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(94)90977-6 ◽

1994 ◽

Vol 137 (3-4) ◽

pp. 400-404 ◽

Author(s):

Jyh-Feng Lin ◽

Meng-Chyi Wu ◽

Ming-Jiunn Jou ◽

Chuan-Ming Chang ◽

Biing-Jye Lee

Keyword(s):

Vapor Phase ◽

Light Emitting Diodes ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Light Emitting ◽

Double Heterostructure

Download Full-text

Abbreviated GaN metalorganic vapor phase epitaxy growth mode on nano-patterned sapphire for enhanced efficiency of InGaN-based light-emitting diodes

10.1117/12.841503 ◽

2010 ◽

Author(s):

Yik-Khoon Ee ◽

Xiao-Hang Li ◽

Jeff Biser ◽

Wanjun Cao ◽

Helen M. Chan ◽

...

Keyword(s):

Vapor Phase ◽

Light Emitting Diodes ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Growth Mode ◽

Download Full-text

The effect of trimethylgallium flows in the AlInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.3571440 ◽

2011 ◽

Vol 98 (12) ◽

pp. 121115 ◽

Author(s):

Yi-Keng Fu ◽

Ren-Hao Jiang ◽

Yu-Hsuan Lu ◽

Bo-Chun Chen ◽

Rong Xuan ◽

...

Keyword(s):

Ultraviolet Light ◽

Vapor Phase ◽

Atmospheric Pressure ◽

Light Emitting Diodes ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Light Emitting ◽

Near Ultraviolet ◽

Ultraviolet Light Emitting Diodes

Download Full-text

Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy

Solid-State Electronics ◽

10.1016/j.sse.2011.04.018 ◽

2011 ◽

Vol 62 (1) ◽

pp. 142-145 ◽

Author(s):

Yi-Keng Fu ◽

Yu-Hsuan Lu ◽

Ren-Hao Jiang ◽

Bo-Chun Chen ◽

Yen-Hsiang Fang ◽

...

Keyword(s):

Vapor Phase ◽

Atmospheric Pressure ◽

Light Emitting Diodes ◽

Uv Light ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Light Emitting ◽

Download Full-text

Comparison of blue and green InGaN∕GaN multiple-quantum-well light-emitting diodes grown by metalorganic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.1866634 ◽

2005 ◽

Vol 86 (10) ◽

pp. 101903 ◽

Author(s):

Y. D. Qi ◽

H. Liang ◽

D. Wang ◽

Z. D. Lu ◽

W. Tang ◽

...

Keyword(s):

Quantum Well ◽

Vapor Phase ◽

Light Emitting Diodes ◽

Multiple Quantum Well ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Multiple Quantum ◽

Download Full-text

Metalorganic Vapor Phase Epitaxy of III-Nitride Light-Emitting Diodes on Nanopatterned AGOG Sapphire Substrate by Abbreviated Growth Mode

IEEE Journal of Selected Topics in Quantum Electronics ◽

10.1109/jstqe.2009.2017208 ◽

2009 ◽

Vol 15 (4) ◽

pp. 1066-1072 ◽

Author(s):

Yik-Khoon Ee ◽

J.M. Biser ◽

W. Cao ◽

H.M. Chan ◽

R.P. Vinci ◽

...

Keyword(s):

Vapor Phase ◽

Sapphire Substrate ◽

Light Emitting Diodes ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Growth Mode ◽

Download Full-text

Metalorganic vapor phase epitaxy grown InGaN∕GaN light-emitting diodes on Si(001) substrate

Applied Physics Letters ◽

10.1063/1.2188383 ◽

2006 ◽

Vol 88 (12) ◽

pp. 121114 ◽

Author(s):

F. Schulze ◽

A. Dadgar ◽

J. Bläsing ◽

A. Diez ◽

A. Krost

Keyword(s):

Vapor Phase ◽

Light Emitting Diodes ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Download Full-text

Red to blue wavelength emission of N-polar $(000\bar{1})$ InGaN light-emitting diodes grown by metalorganic vapor phase epitaxy

Applied Physics Express ◽

10.7567/apex.8.061005 ◽

2015 ◽

Vol 8 (6) ◽

pp. 061005 ◽

Author(s):

Kanako Shojiki ◽

Tomoyuki Tanikawa ◽

Jung-Hun Choi ◽

Shigeyuki Kuboya ◽

Takashi Hanada ◽

...

Keyword(s):

Vapor Phase ◽

Light Emitting Diodes ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Light Emitting ◽

Blue Wavelength ◽

Wavelength Emission

Download Full-text

Growth and characterization of Ga0.65In0.35P orange light‐emitting diodes by metalorganic vapor–phase epitaxy

Journal of Applied Physics ◽

10.1063/1.354781 ◽

1993 ◽

Vol 74 (3) ◽

pp. 1781-1786 ◽

Author(s):

Jyh‐Feng Lin ◽

Meng‐Chyi Wu ◽

Ming‐Jiuun Jou ◽

Chuan‐Ming Chang ◽

Chin‐Yuan Chen ◽

...

Keyword(s):

Vapor Phase ◽

Light Emitting Diodes ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Download Full-text

Room temperature 1.5μm electroluminescnence from GaInP/Er,O-codoped GaAs/GaInP double heterostructure injection-type light emitting diodes grown by organometallic vapor phase epitaxy

Materials Science and Engineering B ◽

10.1016/j.mseb.2003.08.015 ◽

2003 ◽

Vol 105 (1-3) ◽

pp. 57-60 ◽

Author(s):

Y Fujiwara ◽

A Koizumi ◽

A Urakami ◽

T Yoshikane ◽

K Inoue ◽

...

Keyword(s):

Vapor Phase ◽

Room Temperature ◽

Light Emitting Diodes ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy ◽

Light Emitting ◽

Double Heterostructure ◽

Download Full-text

Nitrogen-polar core-shell GaN light-emitting diodes grown by selective area metalorganic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.4737395 ◽

2012 ◽

Vol 101 (3) ◽

pp. 032103 ◽

Author(s):

Shunfeng Li ◽

Xue Wang ◽

Sönke Fündling ◽

Milena Erenburg ◽

Johannes Ledig ◽

...

Keyword(s):

Vapor Phase ◽

Light Emitting Diodes ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Light Emitting ◽

Download Full-text