ABSTRACTGas source silicon molecular beam epitaxial (Si-MBE) growth is microscopically governed by a disociative adsorption of silicon hydrides, such as Si2H6 source gas molecules on Si surface. The dissociative adsorption generates SiH species on the surface. From this hydride phase, hydrogen desorbs thermaly. The temperature dependence of the growth rate indicated that the hydrogen desorption from the SiH is the rate limiting step. In HBO2 Knudsen cell doping, B adsorbates block the surface migration. Such a blocking effect can be avoided by B2H6 gas dopant, because of the similar incorpration mechanism of B2H6 to that of Si2H6. However, in PH3 gas doping, a crystal quality degradation was observed at a high doping range due to the preferentially high sticking coefficient of PH3 and the resulting surface dangling bond termination. The selective epitaxial growth of a B doped layer using Si2H6 and B2H6 was applied to a novel structured base fabrication for super self-aligned selectively grown base transistor (SSSBT). A successful achievement of the SSSBT fabrication indicates the high potentiality of gas source Si-MBE to the sub-micron size ultra-high speed bipolar large scale integrated (LSI) circuits.
