Annealing temperature dependence ofTCof thin‐film Gd grown on a glass substrate

Journal of Applied Physics ◽

10.1063/1.341398 ◽

1988 ◽

Vol 64 (7) ◽

pp. 3614-3619 ◽

Author(s):

O. Nakamura ◽

K. Baba ◽

H. Ishii ◽

T. Takeda

Keyword(s):

Thin Film ◽

Temperature Dependence ◽

Glass Substrate ◽

Annealing Temperature ◽

Annealing Temperature Dependence

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Annealing Temperature Dependence of ZTO Thin Film Properties and Its Application on Thin Film Transistors by Inkjet Printing

Journal of Electronic Materials ◽

10.1007/s11664-019-07871-7 ◽

2019 ◽

Vol 49 (3) ◽

pp. 2003-2007

Author(s):

Sang Ouk Ryu ◽

Cheul Ho Ha ◽

Ho Young Jun ◽

Si Ok Ryu

Keyword(s):

Thin Film ◽

Temperature Dependence ◽

Inkjet Printing ◽

Thin Film Transistors ◽

Annealing Temperature ◽

Film Properties ◽

Annealing Temperature Dependence

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Annealing temperature dependence on the positive bias stability of IGZO thin-film transistors

Journal of Information Display ◽

10.1080/15980316.2011.621331 ◽

2011 ◽

Vol 12 (4) ◽

pp. 209-212 ◽

Author(s):

Hyun Soo Shin ◽

Byung Du Ahn ◽

You Seung Rim ◽

Hyun Jae Kim

Keyword(s):

Thin Film ◽

Temperature Dependence ◽

Thin Film Transistors ◽

Annealing Temperature ◽

Positive Bias ◽

Bias Stability ◽

Annealing Temperature Dependence

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Positive-Bias Stress Test on Amorphous In–Ga–Zn–O Thin Film Transistor: Annealing-Temperature Dependence

Journal of Display Technology ◽

10.1109/jdt.2014.2350518 ◽

2014 ◽

Vol 10 (11) ◽

pp. 975-978 ◽

Author(s):

Kay Domen ◽

Takaya Miyase ◽

Katsumi Abe ◽

Hideo Hosono ◽

Toshio Kamiya

Keyword(s):

Thin Film ◽

Temperature Dependence ◽

Annealing Temperature ◽

Stress Test ◽

Thin Film Transistor ◽

Positive Bias ◽

Bias Stress ◽

Annealing Temperature Dependence

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Annealing Temperature Dependence of Crystallization Process of SiGeAu Thin Film

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.115602 ◽

2010 ◽

Vol 49 (11) ◽

pp. 115602 ◽

Author(s):

Hiroaki Takiguchi ◽

Kazuto Fukui ◽

Yoichi Okamoto

Keyword(s):

Thin Film ◽

Temperature Dependence ◽

Crystallization Process ◽

Annealing Temperature ◽

Annealing Temperature Dependence

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Annealing Temperature Dependence of Exchange Bias Effect in Short Time Annealed NiFe/NiMn Bilayer Thin Film by FMR Measurement

Journal of Magnetics ◽

10.4283/jmag.2005.10.4.133 ◽

2005 ◽

Vol 10 (4) ◽

pp. 133-136 ◽

Author(s):

Yong-Goo Yoo ◽

Nam-Seok Park ◽

Seong-Gi Min ◽

Seong-Cho Yu

Keyword(s):

Thin Film ◽

Temperature Dependence ◽

Exchange Bias ◽

Annealing Temperature ◽

Bias Effect ◽

Exchange Bias Effect ◽

Annealing Temperature Dependence

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Annealing temperature dependence of the performance of bulk heterojunction polymer: Fullerene solar cells under short and open circuit conditions

Synthetic Metals ◽

10.1016/j.synthmet.2020.116611 ◽

2021 ◽

Vol 271 ◽

pp. 116611

Author(s):

M. Radaoui ◽

A. Ben Fredj ◽

S. Romdhane ◽

D.A.M. Egbe ◽

H. Bouchriha

Keyword(s):

Solar Cells ◽

Temperature Dependence ◽

Annealing Temperature ◽

Bulk Heterojunction ◽

Open Circuit ◽

Annealing Temperature Dependence

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Current perpendicular-to-plane giant magnetoresistance using anL12Ag3Mgspacer andCo2Fe0.4Mn0.6SiHeusler alloy electrodes: Spacer thickness and annealing temperature dependence

Physical Review Materials ◽

10.1103/physrevmaterials.1.044402 ◽

2017 ◽

Vol 1 (4) ◽

Author(s):

Takahide Kubota ◽

Yusuke Ina ◽

Zhenchao Wen ◽

Hiroyuki Narisawa ◽

Koki Takanashi

Keyword(s):

Temperature Dependence ◽

Giant Magnetoresistance ◽

Annealing Temperature ◽

Current Perpendicular To Plane ◽

Spacer Thickness ◽

Annealing Temperature Dependence

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Thickness and annealing temperature dependence of perpendicular exchange biasing in [Pd/Co]/FeMn multilayers

INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005. ◽

10.1109/intmag.2005.1464463 ◽

2005 ◽

Author(s):

H.W. Joo ◽

S.W. Kim ◽

M.S. Lee ◽

J.H. An ◽

S.D. Choi ◽

...

Keyword(s):

Temperature Dependence ◽

Annealing Temperature ◽

Exchange Biasing ◽

Annealing Temperature Dependence

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Annealing temperature dependence of photoluminescent characteristics of silicon nanocrystals embedded in silicon-rich silicon nitride films grown by PECVD

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/j.nimb.2012.12.096 ◽

2013 ◽

Vol 307 ◽

pp. 344-348 ◽

Author(s):

D.S. Chao ◽

J.H. Liang

Keyword(s):

Silicon Nitride ◽

Temperature Dependence ◽

Silicon Nanocrystals ◽

Annealing Temperature ◽

Silicon Nitride Films ◽

Annealing Temperature Dependence

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The annealing temperature dependence of anatase TiO2thin films prepared by the electron-beam evaporation method

Semiconductor Science and Technology ◽

10.1088/0268-1242/31/12/125012 ◽

2016 ◽

Vol 31 (12) ◽

pp. 125012 ◽

Author(s):

Atefeh Taherniya ◽

Davood Raoufi

Keyword(s):

Electron Beam ◽

Temperature Dependence ◽

Annealing Temperature ◽

Electron Beam Evaporation ◽

Evaporation Method ◽

Annealing Temperature Dependence

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