Spatially direct and indirect transitions of self-assembled GeSi/Si quantum dots studied by photoluminescence excitation spectroscopy

Self Assembled ◽

Lateral conduction mid-Infrared photodetectors using self-assembled Ge/Si quantum dots

2006 IEEE Nanotechnology Materials and Devices Conference ◽

10.1109/nmdc.2006.4388883 ◽

2006 ◽

Author(s):

S.-W. Lee ◽

T.G. Kim ◽

K. Hirakawa ◽

J.S. Kim ◽

H.Y. Cho

Keyword(s):

Quantum Dots ◽

Infrared Photodetectors ◽

Mid Infrared ◽

Self Assembled ◽

Impact of Annealing on Surface Morphology and Photoluminescence of Self-Assembled Ge and Si Quantum Dots

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2014.8710 ◽

2014 ◽

Vol 14 (7) ◽

pp. 5266-5271 ◽

Cited By ~ 4

Author(s):

Alireza Samavati ◽

Zulkafli Othaman ◽

Shadab Dabagh ◽

Sib Krishna Ghoshal

Keyword(s):

Quantum Dots ◽

Surface Morphology ◽

Self Assembled ◽

Influences of template layer thickness on strain fields and transition energies in self-assembled SiGe∕Si quantum dots

Journal of Applied Physics ◽

10.1063/1.2891418 ◽

2008 ◽

Vol 103 (7) ◽

pp. 073705 ◽

Cited By ~ 7

Author(s):

M. K. Kuo ◽

T. R. Lin ◽

K. B. Hong

Keyword(s):

Quantum Dots ◽

Layer Thickness ◽

Strain Fields ◽

Transition Energies ◽

Self Assembled ◽

Probing the carrier transfer processes in a self-assembled system with In 0.3 Ga 0.7 As/GaAs quantum dots by photoluminescence excitation spectroscopy

Superlattices and Microstructures ◽

10.1016/j.spmi.2016.03.023 ◽

2016 ◽

Vol 93 ◽

pp. 214-220

Author(s):

Paweł Podemski ◽

Maciej Pieczarka ◽

Aleksander Maryński ◽

Jan Misiewicz ◽

Andreas Löffler ◽

...

Keyword(s):

Quantum Dots ◽

Carrier Transfer ◽

Transfer Processes ◽

Self Assembled

The effects of thermal annealing in self-assembled Ge/Si quantum dots

Applied Surface Science ◽

10.1016/j.apsusc.2006.10.045 ◽

2007 ◽

Vol 253 (10) ◽

pp. 4792-4795 ◽

Cited By ~ 5

Author(s):

QiJia Cai ◽

Hao Zhou ◽

Fang Lu

Keyword(s):

Quantum Dots ◽

Thermal Annealing ◽

Self Assembled ◽

Lateral photoconductivity and bound states of self-assembled Ge/Si quantum dots

Nanotechnology ◽

10.1088/0957-4484/18/10/105403 ◽

2007 ◽

Vol 18 (10) ◽

pp. 105403 ◽

Cited By ~ 5

Author(s):

S-W Lee ◽

T G Kim ◽

K Hirakawa ◽

J S Kim ◽

S-H Choi ◽

...

Keyword(s):

Quantum Dots ◽

Bound States ◽

Self Assembled ◽

Line Broadening of Photoluminescence Excitation Resonances in Single Self-Assembled Quantum Dots

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.l1464 ◽

2002 ◽

Vol 41 (Part 2, No. 12B) ◽

pp. L1464-L1466 ◽

Cited By ~ 4

Author(s):

Yasunori Toda ◽

Satoshi Kako ◽

Masao Nishioka ◽

Yasuhiko Arakawa

Keyword(s):

Quantum Dots ◽

Line Broadening ◽

Self Assembled

Surface photovoltage and photoluminescence excitation spectroscopy of stacked self-assembled InAs quantum dots with InGaAs overgrown layers

Journal of Applied Physics ◽

10.1063/1.2907406 ◽

2008 ◽

Vol 103 (8) ◽

pp. 084303 ◽

Cited By ~ 9

Author(s):

C. H. Chan ◽

C. W. Kao ◽

H. P. Hsu ◽

Y. S. Huang ◽

J. S. Wang ◽

...

Keyword(s):

Quantum Dots ◽

Surface Photovoltage ◽

Inas Quantum Dots ◽

Self Assembled

Composition, volume, and aspect ratio dependence of the strain distribution, band lineups and electron effective masses in self-assembled pyramidal In[sub 1−x]Ga[sub x]As/GaAs and Si[sub x]Ge[sub 1−x]/Si quantum dots

Journal of Applied Physics ◽

10.1063/1.1410318 ◽

2002 ◽

Vol 91 (1) ◽

pp. 389 ◽

Cited By ~ 35

Author(s):

M. Califano ◽

P. Harrison

Keyword(s):

Quantum Dots ◽

Aspect Ratio ◽

Strain Distribution ◽

Ratio Dependence ◽

Effective Masses ◽

Self Assembled ◽

Mechanical Strain in Capped and Uncapped Self-Assembled Ge/Si Quantum Dots

Brazilian Journal of Physics ◽

10.1007/s13538-015-0363-6 ◽

2015 ◽

Vol 45 (6) ◽

pp. 615-620

Author(s):

P. F. Gomes ◽

H. A. Fernandes ◽

J. L. González-Arango

Keyword(s):

Quantum Dots ◽

Mechanical Strain ◽

Self Assembled ◽