Transport critical current density and electrical characterization of patterned high‐Tcsuperconducting thin films prepared by metallo‐organic decomposition

AbstractWe have performed transport critical current density, Jc, measurements on epitaxial superconducting thin films which were in‐situ patterned during the laser deposition process. Shadow masks of various dimensions were placed close to the substrate to generate different patterns. Epitaxial films of YBa2Cu3O7 on (100) SrTiO3, (100) YSZ, and (100) LaA1O3 substrates were fabricated at low processing temperatures (500‐650°Q by the biased laser deposition technique in an oxygen ambient of 200 mtorr. Excellent quality superconducting thin films were formed on patterned areas. The critical temperature of the films was found to be in the range of 88 to 90 K, and the best critical current density values (at 77K, and zero magnetic field) greater than 6.5 x106 Amps/cm2 were obtained for silver doped YBa2Cu3O7 films on (100)LaAlO3 substrates.

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Microstructural characterization of YBa2Cu3O7-x thin films formed by metalorganic CVD

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100089718 ◽

1991 ◽

Vol 49 ◽

pp. 1080-1081

Author(s):

P. Lu ◽

W. Huang ◽

C.S. Chern ◽

Y.Q. Li ◽

J. Zhao ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Critical Current Density ◽

Critical Current ◽

Current Density ◽

Film Growth ◽

Chemical Vapor ◽

Microstructural Characterization ◽

Ion Milling ◽

Conventional Grinding

The YBa2Cu3O7-x thin films formed by metalorganic chemical vapor deposition(MOCVD) have been reported to have excellent superconducting properties including a sharp zero resistance transition temperature (Tc) of 89 K and a high critical current density of 2.3x106 A/cm2 or higher. The origin of the high critical current in the thin film compared to bulk materials is attributed to its structural properties such as orientation, grain boundaries and defects on the scale of the coherent length. In this report, we present microstructural aspects of the thin films deposited on the (100) LaAlO3 substrate, which process the highest critical current density.Details of the thin film growth process have been reported elsewhere. The thin films were examined in both planar and cross-section view by electron microscopy. TEM sample preparation was carried out using conventional grinding, dimpling and ion milling techniques. Special care was taken to avoid exposure of the thin films to water during the preparation processes.

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Effects of surface damage on critical current density in MgB2 thin films

Current Applied Physics ◽

10.1016/j.cap.2020.11.008 ◽

2021 ◽

Vol 22 ◽

pp. 14-19

Author(s):

Soon-Gil Jung ◽

Duong Pham ◽

Jung Min Lee ◽

Yoonseok Han ◽

Won Nam Kang ◽

...

Keyword(s):

Thin Films ◽

Critical Current Density ◽

Critical Current ◽

Current Density ◽

Surface Damage ◽

Mgb2 Thin Films

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Critical current density and ac harmonic voltage generation in YBa2Cu3O7-δ thin films by the screening technique

Physica C Superconductivity ◽

10.1016/j.physc.2009.12.026 ◽

2010 ◽

Vol 470 ◽

pp. S972-S974 ◽

Cited By ~ 3

Author(s):

Israel O. Pérez-López ◽

Fidel Gamboa ◽

Víctor Sosa

Keyword(s):

Thin Films ◽

Critical Current Density ◽

Critical Current ◽

Current Density ◽

Screening Technique ◽

Harmonic Voltage ◽

Voltage Generation

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Characterization of Epitaxial Superconducting YBacuO Thin Films with Three Different Orientations

MRS Proceedings ◽

10.1557/proc-169-679 ◽

1989 ◽

Vol 169 ◽

Author(s):

X.K. Wang ◽

D.X. Li ◽

S.N. Song ◽

J.Q. Zheng ◽

R.P.H. Chang ◽

...

Keyword(s):

Thin Films ◽

Critical Current Density ◽

Critical Current ◽

Current Density ◽

Orientation Dependence ◽

Zero Field ◽

Epitaxial Thin Films ◽

Oriented Film ◽

Zero Resistance ◽

Xrd Patterns

AbstractEpitaxial thin films of YBaCuO were prepared by multilayer deposition from Y, Cu, and BaF2 sources with: (1) the a‐axis perpendicular to (100)SrTiO3; (2) the c‐axis perpendicular to (100)SrTiO3; and (3) the [110] axis perpendicular to (110)SrTiO3. XRD patterns as well as SEM and HREM images confirm that the films are highly oriented, essentially epitaxial. Both the a‐axis oriented and the c‐axis oriented films exhibit zero resistance at 91K. The [110] oriented film shows the sharpest transiton with a transition width of IK and zero resistance at 85K. The zero field critical current density, Jc, determined magnetically, is in excess of 107A/cm2 at 4.4K and 1.04 x 106A/cm2 at 77K for the c‐axis oriented film; for the a‐axis oriented film we obtained 6.7 x 106A/cm2 at 4.4K and 1.2 x 105A/cm2 at 77K. The orientation dependence of the critical current density in the basal plane of the a‐axis oriented film was studied. The largest Jc's occur along the in‐plane <100> axes of the substrate.

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