Raman scattering, laser annealing and pressure-optical studies of ion beam deposited amorphous carbon films

Author(s):  
S. K. Hark ◽  
M. A. Machonkin ◽  
F. Jansen ◽  
M. L. Slade ◽  
B. A. Weinstein
1987 ◽  
Vol 62 (2) ◽  
pp. 729-731 ◽  
Author(s):  
M. Ramsteiner ◽  
J. Wagner ◽  
Ch. Wild ◽  
P. Koidl

1999 ◽  
Vol 593 ◽  
Author(s):  
F.L. Freire ◽  
L.G. Jacobsohn ◽  
D.F. Franceschini ◽  
S.S. Camargo

ABSTRACTAmorphous carbon films were deposited onto (100) Si crystals and onto ultra-pure Al foils by dc-magnetron sputtering with different Ar plasma pressures, from 0.17 to 1.4 Pa. We investigate the voids structure and the voids density in these films by means of small angle x-ray scattering (SAXS) and mass spectrometry of effused gases. The analysis of the effusion spectra provided clear evidence that films deposited at lower pressures are compact, while the films deposited at higher pressure present a more open structural arrangement, confirming density results obtained by using ion beam techniques. SAXS results reveal that the fraction of open volumes increases with the plasma pressure: a direct correlation between film density and open volume fraction is found. These different film microstructures could be explained by the existence of different bombarding regimes during film growth


2002 ◽  
Vol 92 (2) ◽  
pp. 870-875 ◽  
Author(s):  
D. Papadimitriou ◽  
G. Roupakas ◽  
C. A. Dimitriadis ◽  
S. Logothetidis

2017 ◽  
Vol 2017 ◽  
pp. 1-5 ◽  
Author(s):  
P. F. Barbieri ◽  
F. C. Marques

Amorphous carbon films can be prepared with a large variety of structure and have been used in a number of technological applications. Many of their properties have been determined, but very little is known concerning the effect of pressure on their properties. In this work we investigate the influence of pressure of graphite-like amorphous carbon films on the density of states (DOS) using X-ray Excited Auger Electron Spectroscopy (XAES) and the second derivate method of the XAES. The films were deposited by ion beam deposition and simultaneously bombarded with argon, which is responsible for the variation of the film stress, reaching extremely high values (4.5 GPa). Marked variations of the density of states of the pπ, pσ, sp, and s components were observed with increasing stress.


2004 ◽  
Vol 69 (4) ◽  
Author(s):  
M. Yoshikawa ◽  
K. Iwagami ◽  
T. Matsunobe ◽  
N. Morita ◽  
Y. Yamaguchi ◽  
...  

2002 ◽  
Vol 92 (10) ◽  
pp. 5966-5970 ◽  
Author(s):  
J. R. Shi ◽  
J. P. Wang ◽  
A. T. S. Wee ◽  
C. B. Yeo ◽  
C. T. Cheng ◽  
...  

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