Extraction of carriers photogenerated at p type amorphous SiC window layer in amorphous Si solar cells

ABSTRACTAmorphous SiC p-layers doped with trimethylboron (B(CH3) 3) were prepared with optical and electrical properties superior to those prepared with B2H6. Devices were prepared with efficiencies as high as 11.4% using trimethyl boron. The improved properties of B(CH3)3-doped a-SiC result from the fact that trimethylboron is a more effective doping agent than B2H6 and produces p-layers with a higher bandgap.

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Properties of High Quality p-Type Micro-Crystalline-Si Prepared by Cat-CVD

MRS Proceedings ◽

10.1557/proc-762-a13.2 ◽

2003 ◽

Vol 762 ◽

Cited By ~ 1

Author(s):

Hideki Matsumura ◽

Kouichi Katouno ◽

Masaya Itoh ◽

Atsushi Masuda

Keyword(s):

Solar Cells ◽

Vapor Deposition ◽

Chemical Vapor ◽

Window Layer ◽

Hot Wire ◽

Structural And Optical Properties ◽

High Quality ◽

Suitable Material ◽

Si Solar Cells ◽

P Type

AbstractProperties of p-type μc-Si prepared by Cat-CVD (Catalytic Chemical Vapor Deposition), often called Hot-Wire CVD, are studied for possible application to window layer of a-Si solar cells. Electrical, structural and optical properties are investigated. It is concluded that Cat-CVD p-type μc-Si is a suitable material as a window layer for Cat-CVD a-Si solar cells.

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New Material for p-Type Window Layer in a-Si Solar Cells

Japanese Journal of Applied Physics ◽

10.1143/jjap.25.l7 ◽

1986 ◽

Vol 25 (Part 2, No. 1) ◽

pp. L7-L9 ◽

Cited By ~ 1

Author(s):

Toshihiko Yoshida ◽

Keitaro Fukui ◽

Hideo Yamamoto ◽

Mitsuo Matsumura

Keyword(s):

Solar Cells ◽

Window Layer ◽

Si Solar Cells ◽

New Material ◽

P Type

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Broadband absorption enhancement in amorphous Si solar cells using metal gratings and surface texturing

10.1117/12.2253326 ◽

2017 ◽

Cited By ~ 1

Author(s):

Sara Magdi ◽

Mohamed A. Swillam

Keyword(s):

Solar Cells ◽

Surface Texturing ◽

Absorption Enhancement ◽

Broadband Absorption ◽

Si Solar Cells ◽

Amorphous Si ◽

Metal Gratings

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Front Side Metallization of n- and p-Type, High-Efficiency, Single-Crystalline Si Solar Cells: Assessing the Temperature-Dependent Series Resistance

Journal of Electronic Materials ◽

10.1007/s11664-016-4459-8 ◽

2016 ◽

Vol 45 (6) ◽

pp. 2656-2661 ◽

Cited By ~ 3

Author(s):

Benjamin Willsch ◽

Praveen Kumar ◽

Oliver Eibl

Keyword(s):

Solar Cells ◽

High Efficiency ◽

Series Resistance ◽

Front Side ◽

Temperature Dependent ◽

Single Crystalline ◽

Si Solar Cells ◽

Dependent Series ◽

P Type

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Development of Amorphous Si Solar Cells in Japan

Photovoltaic Solar Energy Conference ◽

10.1007/978-94-009-8423-3_44 ◽

1981 ◽

pp. 309-316 ◽

Cited By ~ 1

Author(s):

Yukinori Kuwano ◽

Michitoshi Ohnishi

Keyword(s):

Solar Cells ◽

Si Solar Cells ◽

Amorphous Si

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Photocurrent increase in amorphous Si solar cells by increased reflectivity of LiF/Al electrodes

Solar Energy Materials and Solar Cells ◽

10.1016/j.solmat.2012.06.044 ◽

2012 ◽

Vol 107 ◽

pp. 259-262 ◽

Cited By ~ 5

Author(s):

T. Lanz ◽

L. Fang ◽

S.J. Baik ◽

K.S. Lim ◽

B. Ruhstaller

Keyword(s):

Solar Cells ◽

Si Solar Cells ◽

Amorphous Si

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Boron liquid solution deposited by spray method for p-type emitter formation in crystalline Si solar cells

10.1117/12.2261693 ◽

2016 ◽

Author(s):

Piotr Panek ◽

Barbara Swatowska ◽

Wojciech Dawidowski ◽

Mari Juel ◽

Paweł Zięba

Keyword(s):

Solar Cells ◽

Liquid Solution ◽

Si Solar Cells ◽

Spray Method ◽

P Type

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IMPACT OF WIDE BANDGAP P-TYPE NC-SI ON THE PERFORMANCE OF A-SI SOLAR CELLS

International Journal of Modern Physics B ◽

10.1142/s0217979202009457 ◽

2002 ◽

Vol 16 (01n02) ◽

pp. 57-63 ◽

Cited By ~ 1

Author(s):

X. DENG ◽

W. WANG ◽

S. HAN ◽

H. POVOLNY ◽

W. DU ◽

...

Keyword(s):

Solar Cells ◽

Density Functional ◽

Nanocrystalline Silicon ◽

Functional Approach ◽

Wide Bandgap ◽

Quantum Size ◽

Si Solar Cells ◽

P Type ◽

The Impact ◽

Hydrogenated Amorphous

This paper reports the impact of a wide bandgap p-type hydrogenated nanocrystalline silicon (nc-Si:H) on the performances of hydrogenated amorphous silicon (a-Si:H) based solar cells. The p-layer consists of nanometer-sized Si Crystallites and has a wide effective bandgap determined mainly by the quantum size-confinement effect (QSE). By incorporation of this p-layer into the devices we have obtained high performances of a-Si:H top solar cells with V oc = 1.045 V and FF = 70.3%, and much improved mid and bottom a-SiGe:H cells, deposited on stainless steel (SS) substrate. The effects of the band-edge mismatch at the p/i-interface on the I-V characteristics of the solar cells are discussed on the bases on the bases of the density-functional approach and the AMPS model.

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