Heteroepitaxial growth of single crystalline 3C‐SiC on Si substrates by gas source molecular beam epitaxy

1992 ◽  
Vol 72 (5) ◽  
pp. 2006-2013 ◽  
Author(s):  
Tatsuo Yoshinobu ◽  
Hideaki Mitsui ◽  
Yoichiro Tarui ◽  
Takashi Fuyuki ◽  
Hiroyuki Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heteroepitaxial Growth ◽  
Single Crystalline ◽  
Si Substrates ◽  
Gas Source

Single-crystalline BaTiO3films grown by gas-source molecular beam epitaxy

2014 ◽  
Vol 7 (12) ◽  
pp. 125502 ◽  
Author(s):  
Yuya Matsubara ◽  
Kei S. Takahashi ◽  
Yoshinori Tokura ◽  
Masashi Kawasaki
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Crystalline ◽  
Gas Source

Heteroepitaxial growth of Ge films on Si substrates by molecular beam epitaxy

1988 ◽  
Vol 53 (22) ◽  
pp. 2179-2181 ◽  
Author(s):  
G. L. Zhou ◽  
K. M. Chen ◽  
W. D. Jiang ◽  
C. Sheng ◽  
X. J. Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heteroepitaxial Growth ◽  
Si Substrates

Low-temperature heteroepitaxial growth of Si on Sapphire by disilane gas-source molecular beam epitaxy

1989 ◽  
Vol 97 (3-4) ◽  
pp. 587-590 ◽  
Author(s):  
Kazuaki Sawada ◽  
Makoto Ishida ◽  
Kiyoteru Hayama ◽  
Tetsuro Nakamura ◽  
Tetso Suzaki
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Heteroepitaxial Growth ◽  
Gas Source

Lattice‐matched epitaxial growth of single crystalline 3C‐SiC on 6H‐SiC substrates by gas source molecular beam epitaxy

1992 ◽  
Vol 60 (7) ◽  
pp. 824-826 ◽  
Author(s):  
Tatsuo Yoshinobu ◽  
Hideaki Mitsui ◽  
Iwao Izumikawa ◽  
Takashi Fuyuki ◽  
Hiroyuki Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Single Crystalline ◽  
Gas Source ◽  
Lattice Matched

Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate Using Monomethylsilane-Based Gas-Source Molecular-Beam Epitaxy

2013 ◽  
Vol 740-742 ◽  
pp. 339-343 ◽  
Author(s):  
Shota Sambonsuge ◽  
Eiji Saito ◽  
Myung Ho Jung ◽  
Hirokazu Fukidome ◽  
Sergey Filimonov ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Growth Conditions ◽  
Si Substrate ◽  
Si Substrates ◽  
High Interest ◽  
Gas Source ◽  
Gas Pressures

3C-SiC is the only polytype that grows heteroepitaxially on Si substrates and, therefore, it is of high interest for various potentail applications. However, the large (~20 %) lattice mismatch of SiC with the Si substrate causes a serious problem. In this respect, rotated epitaxy of 3C-SiC(111) on the Si(110) substrate is highly promising because it allows reduction of the lattice mismatch down to a few percent. We have systematically searched the growth conditions for the onset of this rotated epitaxy, and have found that the rotaed epitaxy occurrs at higher growth temperatures and at lower source-gas pressures. This result indicates that the rotated epitaxy occurs under growth conditions that are close to the equilibrium and is thefore thermodynamically, rather than kinetically, driven.

Highly Ordered GeSi Quantum Dots Fabrication on Patterned Si Substrates with Gas Source Molecular Beam Epitaxy

2017 ◽  
Vol 12 (7) ◽  
pp. 674-676 ◽  
Author(s):  
Liang Qiao ◽  
Miao He ◽  
Hui Zhang ◽  
Shuwen Zheng ◽  
Shuti Li
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Si Substrates ◽  
Gas Source

Gas source molecular beam epitaxy of β-SiC on Si substrates

1996 ◽  
Vol 102 ◽  
pp. 22-27 ◽  
Author(s):  
K. Zekentes ◽  
N. Bécourt ◽  
M. Androulidaki ◽  
K. Tsagaraki ◽  
J. Stoemenos ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Si Substrates ◽  
Gas Source
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