Growth processes in the heteroepitaxy of Ge and Si1−xGex on Si substrates using gas-source molecular beam epitaxy

1999 ◽  
pp. 415-427
Author(s):  
Y. Yasuda ◽  
H. Ikeda ◽  
S. Zaima
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Processes ◽  
Si Substrates ◽  
Gas Source

Heteroepitaxial growth of single crystalline 3C‐SiC on Si substrates by gas source molecular beam epitaxy

1992 ◽  
Vol 72 (5) ◽  
pp. 2006-2013 ◽  
Author(s):  
Tatsuo Yoshinobu ◽  
Hideaki Mitsui ◽  
Yoichiro Tarui ◽  
Takashi Fuyuki ◽  
Hiroyuki Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heteroepitaxial Growth ◽  
Single Crystalline ◽  
Si Substrates ◽  
Gas Source

Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate Using Monomethylsilane-Based Gas-Source Molecular-Beam Epitaxy

2013 ◽  
Vol 740-742 ◽  
pp. 339-343 ◽  
Author(s):  
Shota Sambonsuge ◽  
Eiji Saito ◽  
Myung Ho Jung ◽  
Hirokazu Fukidome ◽  
Sergey Filimonov ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Growth Conditions ◽  
Si Substrate ◽  
Si Substrates ◽  
High Interest ◽  
Gas Source ◽  
Gas Pressures

3C-SiC is the only polytype that grows heteroepitaxially on Si substrates and, therefore, it is of high interest for various potentail applications. However, the large (~20 %) lattice mismatch of SiC with the Si substrate causes a serious problem. In this respect, rotated epitaxy of 3C-SiC(111) on the Si(110) substrate is highly promising because it allows reduction of the lattice mismatch down to a few percent. We have systematically searched the growth conditions for the onset of this rotated epitaxy, and have found that the rotaed epitaxy occurrs at higher growth temperatures and at lower source-gas pressures. This result indicates that the rotated epitaxy occurs under growth conditions that are close to the equilibrium and is thefore thermodynamically, rather than kinetically, driven.

Gas source molecular beam epitaxy of β-SiC on Si substrates

1996 ◽  
Vol 102 ◽  
pp. 22-27 ◽  
Author(s):  
K. Zekentes ◽  
N. Bécourt ◽  
M. Androulidaki ◽  
K. Tsagaraki ◽  
J. Stoemenos ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Si Substrates ◽  
Gas Source

Growth and characterization of Si/SiGe microstructures on patterned Si substrates using gas source molecular beam epitaxy

1995 ◽  
Vol 150 ◽  
pp. 950-954 ◽  
Author(s):  
J. Zhang ◽  
X.M. Zhang ◽  
A. Matsumura ◽  
A. Marinopoulou ◽  
J. Hartung ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Si Substrates ◽  
Gas Source

Optical properties of self-organised SSMBE and GSMBE Ge nanostructures grown on SiGe template layers on Si (118)

2000 ◽  
Vol 648 ◽  
Author(s):  
G. Brémond ◽  
P. Ferrandis ◽  
A. Souifi ◽  
A. Ronda ◽  
I. Berbezier
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Variable Temperature ◽  
Energy Shift ◽  
Hydrogen Atoms ◽  
Si Substrates ◽  
Self Organized ◽  
Gas Source ◽  
Series Of Experiments ◽  
Size Dispersion

AbstractThis work reports on the photoluminescence properties of self-organized fully strained Ge dots fabricated using two different growth techniques: gas source molecular beam epitaxy (GS-MBE) and solid source molecular beam epitaxy (SS-MBE). Variable temperature photoluminescence (PL) measurements were carried out on Si/(n)Ge/SiGe/Si structures (n varying from 1 to 7 monolayers) consisting in double layer structures (Ge(n)/Si1-xGex) deposited on (118) oriented Si substrates. The process used consists in realising in a first step a Si1-xGex template layer with a “self-patterned” morphology. Such patterning, based on periodic morphological modulation of the surface is used to confine and organise the Ge dots in a second deposition step. Similar series of experiments with various growth temperatures, Ge coverage levels and Si1-xGex concentrations (x) were done by both GS-MBE and SS- MBE. The PL from the 2D wetting layer in the case of n = 3 ML has been found to be more intense in GS-MBE thanks to the passivating role of the hydrogen atoms. The 2D to 3D growth transition is accompanied by the occurrence of a red-shifted broad PL band (L) attributed to the Ge dots. While broadened luminescence is obtained from dots directly deposited on the Si substrate, a narrower band is obtained from dots deposited on the template layer. Moreover the red-shift of the (L) band observed in the latter case is attributed to higher Ge concentration in the dots. On the other hand, there is no effect of the hydrogen on the formation of the islands which show similar optical and structural properties in both growth techniques. The main difference between GS-MBE and SS-MBE concerns a low energy shift in the PL of the SSMBE Ge dots we interpret as due to size, dispersion and Ge concentration or strain effects

Sign in / Sign up

Export Citation Format

Share Document