The effects of group IV B/V B/VI B additions on the magnetic properties of Sm2+δ Fe17carbonitrides

ABSTRACTSpintronic devices generally require the spin of carriers to be utilized in the storage or manipulation of data. One theoretical model for ferromagnetism in dilute magnetic semiconductors (DMS) results from the percolation of ferromagnetic regions around dilute dopants such as Mn atoms in III-V or group IV materials through the interaction of Mn atoms with carriers. Our work employed Mn implantation in Ge with subsequent rapid thermal annealing or TEM in-situ annealing to study the correlation between structure and magnetic properties. The magnetic properties of 300-350 ºC implanted Ge:Mn (which produced crystalline Ge films) varied significantly with implantation dose and annealing condition due to precipitation and transformation of different MnxGe1-x secondary phases. It was found that Mn substitution of Ge and MnxGe1-x secondary phases can both result in ferromagnetic properties. By combining TEM in-situ annealing and ex-situ magnetic characterization, we have demonstrated detailed correlation of magnetic properties with nanoscale structures in Mn implanted Ge DMS materials.

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Epitaxial growth and magnetic properties of a new group-IV ferromagnetic semiconductor: Ge1–xFex

physica status solidi (c) ◽

10.1002/pssc.200672881 ◽

2006 ◽

Vol 3 (12) ◽

pp. 4110-4114 ◽

Cited By ~ 7

Author(s):

Yusuke Shuto ◽

Masaaki Tanaka ◽

Satoshi Sugahara

Keyword(s):

Magnetic Properties ◽

Epitaxial Growth ◽

Group Iv ◽

Ferromagnetic Semiconductor

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Magnetic properties of the semifluorinated and semihydrogenated 2D sheets of group-IV and III-V binary compounds

Applied Surface Science ◽

10.1016/j.apsusc.2011.04.042 ◽

2011 ◽

Vol 257 (17) ◽

pp. 7845-7850 ◽

Cited By ~ 48

Author(s):

Yandong Ma ◽

Ying Dai ◽

Meng Guo ◽

Chengwang Niu ◽

Lin Yu ◽

...

Keyword(s):

Magnetic Properties ◽

Group Iv ◽

Binary Compounds

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AEM analysis of crystallization in Ti-based amorphous alloys

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100075142 ◽

1983 ◽

Vol 41 ◽

pp. 270-271

Author(s):

A.R. Pelton ◽

A.F. Marshall ◽

Y.S. Lee

Keyword(s):

Magnetic Properties ◽

Amorphous Alloys ◽

Amorphous Materials ◽

Isothermal Annealing ◽

Amorphous Matrix ◽

Nucleation And Growth ◽

Current Interest ◽

Amorphous Films ◽

Electrical And Magnetic Properties

Amorphous materials are of current interest due to their desirable mechanical, electrical and magnetic properties. Furthermore, crystallizing amorphous alloys provides an avenue for discerning sequential and competitive phases thus allowing access to otherwise inaccessible crystalline structures. Previous studies have shown the benefits of using AEM to determine crystal structures and compositions of partially crystallized alloys. The present paper will discuss the AEM characterization of crystallized Cu-Ti and Ni-Ti amorphous films.Cu60Ti40: The amorphous alloy Cu60Ti40, when continuously heated, forms a simple intermediate, macrocrystalline phase which then transforms to the ordered, equilibrium Cu3Ti2 phase. However, contrary to what one would expect from kinetic considerations, isothermal annealing below the isochronal crystallization temperature results in direct nucleation and growth of Cu3Ti2 from the amorphous matrix.

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Luminescence from individual dislocations in II-VI and III-V semiconductors

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100088488 ◽

1991 ◽

Vol 49 ◽

pp. 834-835

Author(s):

J W Steeds

Keyword(s):

Group Iv ◽

Luminescence Properties ◽

Carrier Recombination ◽

Transmission Electron ◽

Wide Range ◽

Basic Physics ◽

Semiconducting Compounds ◽

Diamond Group ◽

Non Destructive ◽

Technological Significance

There is a wide range of experimental results related to dislocations in diamond, group IV, II-VI, III-V semiconducting compounds, but few of these come from isolated, well-characterized individual dislocations. We are here concerned with only those results obtained in a transmission electron microscope so that the dislocations responsible were individually imaged. The luminescence properties of the dislocations were studied by cathodoluminescence performed at low temperatures (~30K) achieved by liquid helium cooling. Both spectra and monochromatic cathodoluminescence images have been obtained, in some cases as a function of temperature.There are two aspects of this work. One is mainly of technological significance. By understanding the luminescence properties of dislocations in epitaxial structures, future non-destructive evaluation will be enhanced. The second aim is to arrive at a good detailed understanding of the basic physics associated with carrier recombination near dislocations as revealed by local luminescence properties.

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Microstructure in soft magnetic E3 (S1, Al) (Sendust) alloys

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100105916 ◽

1988 ◽

Vol 46 ◽

pp. 770-771

Author(s):

June D. Kim

Keyword(s):

Electron Microscopy ◽

Magnetic Properties ◽

Ternary Phase Diagram ◽

Vertical Tube ◽

Vacuum Induction Melting ◽

Induction Melting ◽

Soft Magnetic ◽

Quenching Temperature ◽

Thin Foils ◽

Vertical Tube Furnace

Iron-base alloys containing 8-11 wt.% Si, 4-8 wt.% Al, known as “Sendust” alloys, show excellent soft magnetic properties. These magnetic properties are strongly dependent on heat treatment conditions, especially on the quenching temperature following annealing. But little has been known about the microstructure and the Fe-Si-Al ternary phase diagram has not been established. In the present investigation, transmission electron microscopy (TEM) has been used to study the microstructure in a Sendust alloy as a function of temperature.An Fe-9.34 wt.% Si-5.34 wt.% Al (approximately Fe3Si0.6Al0.4) alloy was prepared by vacuum induction melting, and homogenized at 1,200°C for 5 hrs. Specimens were heat-treated in a vertical tube furnace in air, and the temperature was controlled to an accuracy of ±2°C. Thin foils for TEM observation were prepared by jet polishing using a mixture of perchloric acid 15% and acetic acid 85% at 10V and ∼13°C. Electron microscopy was performed using a Philips EM 301 microscope.

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