Low‐frequency noise measurements of AlxGa1−xAs/InyGa1−yAs/GaAs high electron mobility transistors

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pp. 2509-2514 ◽  
Author(s):  
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B. Deveaud ◽  
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pp. 2126-2128 ◽  
Author(s):  
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S. V. Danylyuk ◽  
N. Klein ◽  
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Vol 0 (1) ◽  
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