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Direct current and microwave characterization of integrated resonant tunneling diodes
Journal of Applied Physics
◽
10.1063/1.360483
◽
1995
◽
Vol 78
(11)
◽
pp. 6616-6625
◽
Cited By ~ 2
Author(s):
D. B. Janes
◽
K. J. Webb
◽
M. S. Carroll
◽
G. E. Starnes
◽
K. C. Huang
◽
...
Keyword(s):
Direct Current
◽
Resonant Tunneling
◽
Resonant Tunneling Diodes
◽
Tunneling Diodes
◽
Microwave Characterization
Download Full-text
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◽
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◽
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◽
Double Barrier
◽
Tunneling Diodes
◽
Microwave Characterization
◽
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Characterization of GaAs/AlGaAs resonant tunneling diodes with a GaInNAs absorption layer as 1.3 μm photo sensors
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◽
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◽
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Resonant Tunneling
◽
Resonant Tunneling Diodes
◽
Tunneling Diodes
◽
Absorption Layer
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Non-destructive characterization of thin layer resonant tunneling diodes
Journal of Applied Physics
◽
10.1063/1.5113585
◽
2019
◽
Vol 126
(12)
◽
pp. 124304
Author(s):
Răzvan Baba
◽
Kristof J. P. Jacobs
◽
Brett A. Harrison
◽
Ben J. Stevens
◽
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◽
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Keyword(s):
Thin Layer
◽
Resonant Tunneling
◽
Resonant Tunneling Diodes
◽
Tunneling Diodes
◽
Non Destructive
◽
Non Destructive Characterization
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An assessment of potential nonlinear circuit models for the characterization of resonant tunneling diodes
IEEE Transactions on Electron Devices
◽
10.1109/16.481736
◽
1996
◽
Vol 43
(2)
◽
pp. 332-341
◽
Cited By ~ 7
Author(s):
D.L. Woolard
◽
F.A. Buot
◽
D.L. Rhodes
◽
Xiaojia Lu
◽
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Keyword(s):
Resonant Tunneling
◽
Resonant Tunneling Diodes
◽
Nonlinear Circuit
◽
Tunneling Diodes
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Growth and characterization of CaF2/Ge/CaF2/Si(111) quantum dots for resonant tunneling diodes operating at room temperature
Applied Physics Letters
◽
10.1063/1.1494465
◽
2002
◽
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◽
pp. 499-501
◽
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◽
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◽
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◽
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◽
A. V. Dvurechenskii
◽
...
Keyword(s):
Quantum Dots
◽
Resonant Tunneling
◽
Room Temperature
◽
Resonant Tunneling Diodes
◽
Tunneling Diodes
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Characterization of G-R noise in GaAs/AlGaAs based double barrier resonant tunneling diodes
Proceedings 1995 IEEE Hong Kong Electron Devices Meeting HKDEM-95
◽
10.1109/hkedm.1995.520638
◽
2002
◽
Author(s):
C. Surya
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Resonant Tunneling
◽
Resonant Tunneling Diodes
◽
Double Barrier
◽
Tunneling Diodes
◽
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Characterization of the Effective Tunneling Time and Phase Relaxation Time in Triple-Barrier Resonant Tunneling Diodes
2019 Compound Semiconductor Week (CSW)
◽
10.1109/iciprm.2019.8819043
◽
2019
◽
Cited By ~ 1
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Kotaro Aikawa
◽
Michihiko Suhara
◽
Kiyoto Asakawa
◽
Khaled Arzi
◽
Nils Weimann
◽
...
Keyword(s):
Relaxation Time
◽
Resonant Tunneling
◽
Tunneling Time
◽
Resonant Tunneling Diodes
◽
Phase Relaxation
◽
Tunneling Diodes
◽
Phase Relaxation Time
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Characterization of Argon Fast Atom Beam Source and Application to Mesa Etching Process for GaInP/GaAs Triple-Barrier Resonant Tunneling Diodes
Japanese Journal of Applied Physics
◽
10.1143/jjap.45.5504
◽
2006
◽
Vol 45
(6B)
◽
pp. 5504-5508
◽
Cited By ~ 1
Author(s):
Michihiko Suhara
◽
Norihiko Matsuzaka
◽
Masakazu Fukumitsu
◽
Tsugunori Okumura
Keyword(s):
Resonant Tunneling
◽
Etching Process
◽
Resonant Tunneling Diodes
◽
Atom Beam
◽
Beam Source
◽
Tunneling Diodes
◽
Fast Atom Beam
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Characterization of unintentionally-ordered superlattice resonant-tunneling diodes
10.1109/iciprm.1990.203058
◽
1990
◽
Author(s):
A.C. Seabaugh
◽
Y.-C. Kao
◽
H.-Y. Liu
◽
J.H. Luscombe
◽
H.-L. Tsai
◽
...
Keyword(s):
Resonant Tunneling
◽
Resonant Tunneling Diodes
◽
Tunneling Diodes
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Characterization of GaInP/GaAs triple barrier resonant tunneling diodes fabricated by fast atom beam etching process
10.7567/ssdm.2004.p9-5
◽
2004
◽
Author(s):
M. Fukumitsu
◽
H. Horie
◽
N. Asaoka
◽
M. Suhara
◽
T. Okumura
Keyword(s):
Resonant Tunneling
◽
Etching Process
◽
Resonant Tunneling Diodes
◽
Atom Beam
◽
Tunneling Diodes
◽
Fast Atom Beam
◽
Fast Atom Beam Etching
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