Aluminum‐induced crystallization and counter‐doping of phosphorous‐doped hydrogenated amorphous silicon at low temperatures

1996 ◽  
Vol 79 (10) ◽  
pp. 7529-7536 ◽  
Author(s):  
M. S. Haque ◽  
H. A. Naseem ◽  
W. D. Brown
Keyword(s):  
Amorphous Silicon ◽  
Low Temperatures ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

Effect of stress on the aluminum-induced crystallization of hydrogenated amorphous silicon films

2006 ◽  
Vol 21 (10) ◽  
pp. 2582-2586 ◽  
Author(s):  
Maruf Hossain ◽  
Husam H. Abu-Safe ◽  
Hameed Naseem ◽  
William D. Brown
Keyword(s):  
Amorphous Silicon ◽  
Initial Stress ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Radius Of Curvature ◽  
Si Substrates ◽  
Before And After ◽  
Hydrogenated Amorphous ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

The effect of stress, resulting from the presence of hydrogen, on the aluminum-induced crystallization of hydrogenated amorphous silicon films was studied. Layered thin films of hydrogenated and unhydrogenated amorphous silicon and aluminum, deposited by sputtering, were used to study this effect. The stress of the deposited films was determined by measuring the radius of curvature of c-Si substrates before and after deposition of the films. It was observed that unhydrogenated amorphous silicon films exhibit a high compressive stress compared with hydrogenated ones. The amount of stress is shown to decrease with increasing hydrogen content. It was also observed that aluminum always provides tensile stress. After the initial stress measurements, all the samples were annealed for 30 min at temperatures between 200 °C and 400 °C. X-ray diffraction was used to determine the crystallinity of the silicon films. The results of the study show that the temperature at which crystallization of amorphous silicon is initiated is lower for films with a lower initial stress.

Vacuum-enhanced nickel-induced crystallization of hydrogenated amorphous silicon

2012 ◽  
Vol 112 (7) ◽  
pp. 073506 ◽  
Author(s):  
N. Budini ◽  
P. A. Rinaldi ◽  
R. D. Arce ◽  
J. A. Schmidt ◽  
R. R. Koropecki ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous ◽  
Induced Crystallization

Transient Infrared Stimulated Photoconductivity in a-SI:H at Low Temperatures

1995 ◽  
Vol 377 ◽  
Author(s):  
S. Heck ◽  
P. Stradins ◽  
H. Fritzsche
Keyword(s):  
Energy Loss ◽  
Amorphous Silicon ◽  
Time Resolution ◽  
Low Temperatures ◽  
Hydrogenated Amorphous Silicon ◽  
Infrared Light ◽  
Dual Beam ◽  
Tunneling Recombination ◽  
Hydrogenated Amorphous

ABSTRACTDual beam photoconductivity with bandgap primary light and hv = 0.4- 0.6eV infrared light steps was measured with Ims time resolution in hydrogenated amorphous silicon (a-Si:H) at 4.2K. The results can be described by assuming that the photocurrent transients are due to energy-loss hopping of photocarriers and that the infrared light promotes recombination by reexciting photocarriers thereby enhancing the probability of tunneling recombination.

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