Upper limit of two-dimensional electron density in enhancement-mode Si/SiGe heterostructure field-effect transistors

Applied Physics Letters ◽

10.1063/1.3652909 ◽

2011 ◽

Vol 99 (15) ◽

pp. 153510 ◽

Author(s):

T. M. Lu ◽

C.-H. Lee ◽

S.-H. Huang ◽

D. C. Tsui ◽

C. W. Liu

Keyword(s):

Electron Density ◽

Field Effect ◽

Field Effect Transistors ◽

Two Dimensional ◽

Dimensional Electron ◽

Enhancement Mode ◽

Upper Limit ◽

Heterostructure Field Effect Transistors

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Impact of dopants in GaN on the formation of two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors

Applied Physics A ◽

10.1007/s003390100978 ◽

2002 ◽

Vol 75 (3) ◽

pp. 387-389 ◽

Author(s):

R.M. Chu ◽

Y.D. Zheng ◽

Y.G. Zhou ◽

P. Han ◽

B. Shen ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Heterostructure Field Effect Transistors ◽

Dimensional Electron Gas ◽

Gan Heterostructure

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Doping Design and Two-Dimensional Electron Gas Density in AlGaN/GaN Heterostructure Field-Effect Transistors for High-Power Applications

10.7567/ssdm.2002.g-1-5 ◽

2002 ◽

Author(s):

Narihiko Maeda ◽

Kotaro Tsubaki ◽

Tadashi Saitoh ◽

Naoki Kobayashi

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Heterostructure Field Effect Transistors ◽

Dimensional Electron Gas ◽

Gan Heterostructure

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Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN

Applied Physics Letters ◽

10.1063/1.4875916 ◽

2014 ◽

Vol 104 (19) ◽

pp. 193506 ◽

Author(s):

Guowang Li ◽

Bo Song ◽

Satyaki Ganguly ◽

Mingda Zhu ◽

Ronghua Wang ◽

...

Keyword(s):

Quantum Wells ◽

Field Effect ◽

Field Effect Transistors ◽

Two Dimensional ◽

Dimensional Electron ◽

Electron Gases ◽

Double Heterostructure ◽

Strained Quantum Wells ◽

Heterostructure Field Effect Transistors

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Single-particle energy states in the two-dimensional electron gas of GaN-based single heterostructure field effect transistors

Semiconductor Science and Technology ◽

10.1088/0268-1242/17/11/308 ◽

2002 ◽

Vol 17 (11) ◽

pp. 1180-1183 ◽

Author(s):

L M Gaggero-Sager ◽

M E Mora-Ramos

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

Particle Energy ◽

Two Dimensional ◽

Single Particle Energy ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Heterostructure Field Effect Transistors ◽

Dimensional Electron Gas

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Two-dimensional electron-gas density in AlXGa1−XN/GaN heterostructure field-effect transistors

Applied Physics Letters ◽

10.1063/1.122305 ◽

1998 ◽

Vol 73 (13) ◽

pp. 1856-1858 ◽

Author(s):

Narihiko Maeda ◽

Toshio Nishida ◽

Naoki Kobayashi ◽

Masaaki Tomizawa

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Gas Density ◽

Heterostructure Field Effect Transistors ◽

Dimensional Electron Gas ◽

Gan Heterostructure

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A method to determine electron mobility of the two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors

Superlattices and Microstructures ◽

10.1016/j.spmi.2017.08.030 ◽

2017 ◽

Vol 110 ◽

pp. 289-295 ◽

Author(s):

Peng Cui ◽

Zhaojun Lin ◽

Chen Fu ◽

Yan Liu ◽

Yuanjie Lv

Keyword(s):

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Heterostructure Field Effect Transistors ◽

Dimensional Electron Gas ◽

Gan Heterostructure

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Two-dimensional electron gas transport properties in AlGaN/GaN heterostructure field-effect transistors designed for high-power applications

Optical Materials ◽

10.1016/s0925-3467(03)00046-6 ◽

2003 ◽

Vol 23 (1-2) ◽

pp. 211-217 ◽

Author(s):

Narihiko Maeda ◽

Kotaro Tsubaki ◽

Tadashi Saitoh ◽

Takehiko Tawara ◽

Naoki Kobayashi

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Gas Transport Properties ◽

Heterostructure Field Effect Transistors ◽

Dimensional Electron Gas ◽

Gan Heterostructure

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Investigation for the Formation of Polarization-Induced Two-Dimensional Electron Gas in AlGaN/GaN Heterostructure Field Effect Transistors

physica status solidi (b) ◽

10.1002/1521-3951(200111)228:2<621::aid-pssb621>3.0.co;2-y ◽

2001 ◽

Vol 228 (2) ◽

pp. 621-624 ◽

Author(s):

H.W. Jang ◽

C.M. Jeon ◽

K.H. Kim ◽

J.K. Kim ◽

S.-B. Bae ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Heterostructure Field Effect Transistors ◽

Dimensional Electron Gas ◽

Gan Heterostructure

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Effects of floating gate structures on the two-dimensional electron gas density and electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors

Journal of the Korean Physical Society ◽

10.3938/jkps.71.963 ◽

2017 ◽

Vol 71 (12) ◽

pp. 963-967 ◽

Author(s):

Jingtao Zhao ◽

Zhenguo Zhao ◽

Zidong Chen ◽

Zhaojun Lin ◽

Fukai Xu

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

Floating Gate ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Heterostructure Field Effect Transistors ◽

Dimensional Electron Gas ◽

Gan Heterostructure

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Two-dimensional electron gas transport properties in AlGaN/GaN single- and double-heterostructure field effect transistors

Materials Science and Engineering B ◽

10.1016/s0921-5107(01)00604-3 ◽

2001 ◽

Vol 82 (1-3) ◽

pp. 232-237 ◽

Author(s):

Narihiko Maeda ◽

Tadashi Saitoh ◽

Kotaro Tsubaki ◽

Toshio Nishida ◽

Naoki Kobayashi

Keyword(s):

Transport Properties ◽

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Gas Transport Properties ◽

Heterostructure Field Effect Transistors ◽

Dimensional Electron Gas

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