Effect of graded-temperature arsenic prelayer on quality of GaAs on Ge/Si substrates by metalorganic vapor phase epitaxy

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pp. 171908 ◽  
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H. W. Yu ◽  
E. Y. Chang ◽  
Y. Yamamoto ◽  
B. Tillack ◽  
W. C. Wang ◽  
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F. Reiher ◽  
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J. Bläsing ◽  
M. Wieneke ◽  
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Shunro Fuke

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pp. 1790-1794 ◽  
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pp. 143-148 ◽  
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R. Yakimova ◽  
T. Paskova ◽  
I. Ivanov

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Vol 240 (1-2) ◽  
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Sg. Fujita

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