Effect of graded-temperature arsenic prelayer on quality of GaAs on Ge/Si substrates by metalorganic vapor phase epitaxy
2010 ◽
Vol 312
(2)
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pp. 180-184
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Keyword(s):
2010 ◽
Vol 49
(3)
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pp. 035502
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Keyword(s):
2011 ◽
Vol 40
(8)
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pp. 1790-1794
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Keyword(s):
1997 ◽
Vol 178
(4)
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pp. 431-437
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Keyword(s):
1996 ◽
Vol 14
(3)
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pp. 1739
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Keyword(s):
1988 ◽
Vol 27
(Part 2, No. 5)
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pp. L903-L905
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Keyword(s):
1993 ◽
Vol 129
(1-2)
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pp. 143-148
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2009 ◽
Vol 48
(1)
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pp. 011102
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2002 ◽
Vol 240
(1-2)
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pp. 112-116
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