Effect of Heat Treatment on the Crystalline Quality of ZnSe Epilayers Grown by Metalorganic Vapor Phase Epitaxy

1988 ◽  
Vol 27 (Part 2, No. 5) ◽  
pp. L903-L905 ◽  
Author(s):  
Tokuo Yodo ◽  
Ken Yamashita
Keyword(s):  
Heat Treatment ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Crystalline Quality

High-resolution X-ray diffraction analysis of InN films grown by metalorganic vapor phase epitaxy

2007 ◽  
Vol 22 (3) ◽  
pp. 219-222
Author(s):  
W. J. Wang ◽  
K. Sugita ◽  
Y. Nagai ◽  
Y. Houchin ◽  
A. Hashimoto ◽  
...  
Keyword(s):  
High Resolution ◽  
Vapor Phase ◽  
Growth Temperature ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Crystalline Quality ◽  
X Ray Diffraction ◽  
X Ray ◽  
Symmetric Reflection

The growth temperature dependence of the InN film’s crystalline quality is reported. InN films are grown on sapphire substrates from 570 to 650 °C with low-temperature GaN buffers by metalorganic vapor phase epitaxy (MOVPE). The X-ray rocking curves and reciprocal space mappings of the symmetric reflection (0 0 0 2) and asymmetric reflection (1 0 1 2) are measured with high resolution X-ray diffraction. The results indicate that the crystallinity is sensitive to the growth temperature for MOVPE InN. At growth temperature 580 °C, highly crystalline InN film has been obtained, for which the full-width-at-half-maxima of (0 0 0 2) and (1 0 1 2) rocking curves are 24 and 28 arcmin, respectively. The crystalline quality deteriorates drastically when the growth temperature exceeds 600 °C. Combined with the carrier concentration and mobility, the approach to improve the quality of InN film by MOVPE is discussed.

Layer quality of Sb-doped GaAs grown by metalorganic vapor phase epitaxy

1993 ◽  
Vol 129 (1-2) ◽  
pp. 143-148 ◽  
Author(s):  
R. Yakimova ◽  
T. Paskova ◽  
I. Ivanov
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

The Composition Pulling Effect in InGaN Growth on the GaN and AlGaN Epitaxial Layers Grown by MOVPE

1996 ◽  
Vol 449 ◽  
Author(s):  
Yasutoshi Kawaguchi ◽  
Masaya Shimizu ◽  
Kazumasa Hiramatsu ◽  
Nobuhiko Sawaki
Keyword(s):  
Mole Fraction ◽  
Vapor Phase ◽  
Growth Stage ◽  
Lattice Mismatch ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Crystalline Quality ◽  
Epitaxial Layers ◽  
Initial Growth ◽  
Initial Growth Stage

ABSTRACTInGaN has been grown on GaN and AlGaN epitaxial layers by metalorganic vapor phase epitaxy (MOVPE) and ‘the composition pulling effect’ at the initial growth stage of InGaN has been studied in relation to the lattice mismatch between InGaN and the bottom epitaxial layers. Crystalline quality of InGaN is good near the interface of InGaN/GaN and the composition of InGaN is close to that of GaN. With increasing growth thickness, the crystalline quality becomes worse and the indium mole fraction is increased. The composition pulling effect becomes stronger with increasing lattice mismatch.

The influence of sapphire substrate orientation on crystalline quality of GaN films grown by hydride vapor phase epitaxy

2009 ◽  
Vol 404 (23-24) ◽  
pp. 4919-4921
Author(s):  
Anatolij Govorkov ◽  
Alexsandr Donskov ◽  
Lev Diakonov ◽  
Yulia Kozlova ◽  
Sergej Malahov ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Sapphire Substrate ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Crystalline Quality ◽  
Substrate Orientation

Effect of graded-temperature arsenic prelayer on quality of GaAs on Ge/Si substrates by metalorganic vapor phase epitaxy

2011 ◽  
Vol 99 (17) ◽  
pp. 171908 ◽  
Author(s):  
H. W. Yu ◽  
E. Y. Chang ◽  
Y. Yamamoto ◽  
B. Tillack ◽  
W. C. Wang ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Si Substrates

Crystal Quality and Surface Morphology Improvement of Movpe-Grown GaAs-on-Si Using Tertiarybutylarsine

1992 ◽  
Vol 281 ◽  
Author(s):  
S. MIYAGAKI ◽  
S. Ohkubo ◽  
K. Takai ◽  
N. Takagi ◽  
M. Kimura ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Buffer Layer ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Layer Growth ◽  
Vapor Phase Epitaxy ◽  
Crystal Quality ◽  
Si Substrate ◽  
Gaas Films

ABSTRACTWe developed GaAs heteroepitaxy on a Si substrate by metalorganic vapor phase epitaxy (MOVPE) using tertiarybutylarsine (TBAs). In buffer layer growth at 450°C, the surface morphology and crystal quality of TBAs-grown films were slightly inferior to those of AsH3-grown films. At buffer layer growth below 400°C, the quality of TBAs-grown films improved. The GaAs films we grew using TBAs had a better quality than those grown using AsH2.

Structural evolution of AlN buffer and crystal quality of GaN films on a- and c-sapphire grown by metalorganic vapor phase epitaxy

2012 ◽  
Vol 10 (3) ◽  
pp. 369-372 ◽  
Author(s):  
Koji Okuno ◽  
Takahide Oshio ◽  
Naoki Shibata ◽  
Yoshio Honda ◽  
Masahito Yamaguchi ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Structural Evolution ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Crystal Quality ◽  
Aln Buffer
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