Influence of a ZnTe buffer layer on the structural quality of CdTe epilayers grown on (100)GaAs by metalorganic vapor phase epitaxy

1996 ◽  
Vol 14 (3) ◽  
pp. 1739 ◽  
Author(s):  
G. Leo
Keyword(s):  
Buffer Layer ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Structural Quality

Study of the structural quality of GaN epitaxial layers obtained by hydride vapor phase epitaxy using a low-temperature buffer layer

2015 ◽  
Vol 60 (6) ◽  
pp. 889-894
Author(s):  
I. A. Belogorohov ◽  
A. A. Donskov ◽  
S. N. Knyazev ◽  
Yu. P. Kozlova ◽  
V. F. Pavlov ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Structural Quality ◽  
Epitaxial Layers

Crystal Quality and Surface Morphology Improvement of Movpe-Grown GaAs-on-Si Using Tertiarybutylarsine

1992 ◽  
Vol 281 ◽  
Author(s):  
S. MIYAGAKI ◽  
S. Ohkubo ◽  
K. Takai ◽  
N. Takagi ◽  
M. Kimura ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Buffer Layer ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Layer Growth ◽  
Vapor Phase Epitaxy ◽  
Crystal Quality ◽  
Si Substrate ◽  
Gaas Films

ABSTRACTWe developed GaAs heteroepitaxy on a Si substrate by metalorganic vapor phase epitaxy (MOVPE) using tertiarybutylarsine (TBAs). In buffer layer growth at 450°C, the surface morphology and crystal quality of TBAs-grown films were slightly inferior to those of AsH3-grown films. At buffer layer growth below 400°C, the quality of TBAs-grown films improved. The GaAs films we grew using TBAs had a better quality than those grown using AsH2.

Effect of AlN Buffer Layer on AlGaN/α-Al2O3Heteroepitaxial Growth by Metalorganic Vapor Phase Epitaxy

1988 ◽  
Vol 27 (Part 1, No. 7) ◽  
pp. 1156-1161 ◽  
Author(s):  
Yasuo Koide ◽  
Nobuo Itoh ◽  
Kenji Itoh ◽  
Nobuhiko Sawaki ◽  
Isamu Akasaki
Keyword(s):  
Buffer Layer ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Aln Buffer

Layer quality of Sb-doped GaAs grown by metalorganic vapor phase epitaxy

1993 ◽  
Vol 129 (1-2) ◽  
pp. 143-148 ◽  
Author(s):  
R. Yakimova ◽  
T. Paskova ◽  
I. Ivanov
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

A new buffer layer for high quality GaN growth by metalorganic vapor phase epitaxy

1998 ◽  
Vol 72 (6) ◽  
pp. 704-706 ◽  
Author(s):  
Tetsu Kachi ◽  
Kazuyoshi Tomita ◽  
Kenji Itoh ◽  
Hiroshi Tadano
Keyword(s):  
Buffer Layer ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality

scholarly journals Improvement of structural quality of AlN layers grown on c-plane sapphire substrate by metal–organic vapor phase epitaxy using post-growth annealing with trimethylgallium

AIP Advances ◽  
2022 ◽  
Vol 12 (1) ◽  
pp. 015203
Author(s):  
Masataka Imura ◽  
Hideki Inaba ◽  
Takaaki Mano ◽  
Nobuyuki Ishida ◽  
Fumihiko Uesugi ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Sapphire Substrate ◽  
Vapor Phase Epitaxy ◽  
Structural Quality ◽  
Organic Vapor ◽  
Metal Organic
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