scholarly journals Thermal Stability Study of Oxygen Implanted Algaas/Gaas Single Quantum Well Structures Using PhotoreflectancE

1994 ◽  
Vol 354 ◽  
Author(s):  
P J Hughes ◽  
E H Li ◽  
B L Weiss ◽  
H E Jackson ◽  
J S Roberts
Keyword(s):  
Thermal Stability ◽  
Quantum Well ◽  
Room Temperature ◽  
Low Dose ◽  
Stability Study ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Annealing Conditions ◽  
Thermal Stability Of

AbstractThe effects of interdiffusion on the band structure of two MxGaUxAs/GaAs single quantum well (SQW) structures were studied using room temperature photoreflectance. Rapid thermal annealing of the SQW structures at temperatures of 800°C, 900°C and 1000°C for times up to 180 seconds resulted in limited interdiffusion. Low dose (1014 cm”2) oxygen implantation reduced the thermal stability of these structures where the extent of the interdiffusion was found to be greater for the implanted samples for identical annealing conditions.

Improved thermal stability of AlGaAs/GaAs/AlGaAs single quantum well by growth on Zn-doped GaAs (001)

2003 ◽  
Vol 426 (1-2) ◽  
pp. 186-190 ◽  
Author(s):  
Feng Zhao ◽  
I.W. Choi ◽  
Shu Yuan ◽  
C.Y. Liu ◽  
J. Jiang ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Thermal Stability Of

Photoluminescence from amorphous SiO2/Silicon/amorphous SiO2single quantum well structures

2000 ◽  
Vol 638 ◽  
Author(s):  
Y.Q. Wang ◽  
Y. Ishikawa ◽  
N. Shibata
Keyword(s):  
Quantum Well ◽  
Silicon Dioxide ◽  
Amorphous Silicon ◽  
Room Temperature ◽  
Peak Position ◽  
Single Quantum ◽  
Amorphous Sio2 ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Amorphous Silicon Dioxide

AbstractAmorphous silicon dioxide/silicon/amorphous silicon dioxide single quantum well structures were fabricated by oxygen implantation followed by thermal oxidation. No photoluminescence (PL) was observed from the as grown samples. We found that annealing in hydrogen allows the single quantum well (SQW) structures to emit two-peak (blue and yellow) PL at room temperature (RT). The blue PL (2.9 eV) does not change with the thickness of Si layers or the temperature. The yellow peak varied from 2.0 eV to 2.4 eV with thinning of the Si layer from 5 nm to 0.5 nm. Lowering the temperature also changed the yellow peak position of the 1.5 nm Si-SQW structure from 2.3 eV (RT) to 2.6 eV (8.4 K). We conclude that the blue PL is from SiO2 and the yellow PL is caused by a recombination process in the Si-SQW.

Optical properties of GaBiAs single quantum well structures grown by MBE

2015 ◽  
Vol 30 (9) ◽  
pp. 094016 ◽  
Author(s):  
O Donmez ◽  
A Erol ◽  
M C Arikan ◽  
H Makhloufi ◽  
A Arnoult ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures

C-V and DLTS Investigations of GaAs/InGaAs/GaAs Strained Quantum Well Structures

1993 ◽  
Vol 300 ◽  
Author(s):  
S. Subramanian ◽  
B. M. Arora ◽  
A. K. Srivastava ◽  
S. Banerjee ◽  
G. Fernandes
Keyword(s):  
Quantum Well ◽  
Band Offset ◽  
Full Width ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Strained Quantum Well ◽  
Good Agreement

ABSTRACTIn this paper we report a modified Kroemer's analysis for the determination of the band offset (ΔEc) of single quantum well (SQW) structures from simple C-V measurements. The experimental carrier profile from an MOVPE grown pseudomorphic GaAs/InGaAs/GaAs strained SQW structure shows a sharp accumulation peak bounded by depletion regions on either side. The full width at half maximum of the accumulation peak is comparable to the width of the quantum well. The value of ΔEC obtained from C-V measurement is in good agreement with the values determined by simulation and photoluminescence measurements. DLTS measurements on our SQW samples do not show any peaks which is contrary to the published reports. We believe that it is necessary to carefully isolate the role of interface states, before assigning a DLTS peak to emission from the quantum well.

Insitupatterning and overgrowth for the formation of buried GaAs/AlGaAs single quantum‐well structures

1992 ◽  
Vol 60 (3) ◽  
pp. 365-367 ◽  
Author(s):  
H. Kawanishi ◽  
Y. Sugimoto ◽  
T. Ishikawa ◽  
H. Hidaka
Keyword(s):  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures
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