Determination of the conduction band energy minimum in fluid argon by means of field ionization

1996 ◽  
Vol 105 (4) ◽  
pp. 1305-1310 ◽  
Author(s):  
A. K. Al‐Omari ◽  
K. N. Altmann ◽  
R. Reininger
Keyword(s):  
Conduction Band ◽  
Field Ionization ◽  
Energy Minimum ◽  
Band Energy ◽  
Fluid Argon

Path‐integral molecular‐dynamics calculation of the conduction‐band energy minimum V0 of excess electrons in fluid argon

1992 ◽  
Vol 96 (12) ◽  
pp. 9092-9101 ◽  
Author(s):  
J.‐M. Lopez‐Castillo ◽  
Y. Frongillo ◽  
B. Plenkiewicz ◽  
J.‐P. Jay‐Gerin
Keyword(s):  
Molecular Dynamics ◽  
Conduction Band ◽  
Path Integral ◽  
Energy Minimum ◽  
Band Energy ◽  
Excess Electrons ◽  
Fluid Argon ◽  
Dynamics Calculation

Determination of the density of states effective mass and the energy minimum of theX7satellite conduction band in GaAs from theX6→X7absorption spectrum

1990 ◽  
Vol 57 (4) ◽  
pp. 395-397 ◽  
Author(s):  
W. B. Wang ◽  
N. Ockman ◽  
M. A. Cavicchia ◽  
R. R. Alfano
Keyword(s):  
Effective Mass ◽  
Conduction Band ◽  
Density Of States ◽  
Energy Minimum

scholarly journals Energy of the Conduction Band in Near Critical Point Fluids

2010 ◽  
Vol 2010 ◽  
pp. 1-6 ◽  
Author(s):  
C. M. Evans ◽  
G. L. Findley
Keyword(s):  
Critical Point ◽  
Conduction Band ◽  
Supercritical Fluids ◽  
Critical Density ◽  
Field Ionization ◽  
Experimental Measurements ◽  
Number Density ◽  
Band Energy ◽  
Dense Gases ◽  
Solvent Density

The study of the evolution of the conduction band in dense gases and supercritical fluids near the critical point has been complicated by a lack of precise experimental measurements. Both photoemission from an electrode immersed in the fluid and field ionization of a molecule doped into the fluid have been used to probe solvent density effects on the energy of an excess electron as a function of fluid number density and temperature. In this perspective, we present recent experimental results that show a strong critical point effect on the minimum conduction band energy near the critical density and temperature of a fluid. We also discuss the recent development of a new theoretical model that advances our understanding of the density and temperature dependence of the conduction band minimum in near critical point fluids.

Path-integral molecular-dynamics calculation of the conduction-band energy of excess electrons in fluid argon

2002 ◽  
Author(s):  
J.-M. Lopez-Castillo ◽  
Y. Frongillo ◽  
B. Plenkiewicz ◽  
J.-P. Jay-Gerin
Keyword(s):  
Molecular Dynamics ◽  
Conduction Band ◽  
Path Integral ◽  
Band Energy ◽  
Excess Electrons ◽  
Fluid Argon ◽  
Dynamics Calculation

scholarly journals Conduction Band Energy‐Level Engineering for Improving Open‐Circuit Voltage in Antimony Selenide Nanorod Array Solar Cells

2021 ◽  
pp. 2100868
Author(s):  
Tao Liu ◽  
Xiaoyang Liang ◽  
Yufan Liu ◽  
Xiaoli Li ◽  
Shufang Wang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Energy Level ◽  
Conduction Band ◽  
Open Circuit Voltage ◽  
Nanorod Array ◽  
Open Circuit ◽  
Band Energy ◽  
Antimony Selenide

Raman scattering determination of the energy difference between Γ and L conduction band minima in Ga1−xInxAsySb1−y

2010 ◽  
Vol 97 (9) ◽  
pp. 091909 ◽  
Author(s):  
R. Cuscó ◽  
J. Ibáñez ◽  
L. Artús
Keyword(s):  
Raman Scattering ◽  
Conduction Band ◽  
Energy Difference

Determination of the conduction‐band discontinuities of In0.5Ga0.5P/In1−xGaxAs1−yPy by capacitance–voltage analysis

1995 ◽  
Vol 66 (14) ◽  
pp. 1785-1787 ◽  
Author(s):  
Yong‐Hoon Cho ◽  
Kwan‐Shik Kim ◽  
Sang‐Wan Ryu ◽  
Sang‐Ku Kim ◽  
Byung‐Doo Choe ◽  
...  
Keyword(s):  
Conduction Band ◽  
Capacitance Voltage

A Purely Spectroscopic Technique for Determining Energy Band Offsets in Quantum Wells

1991 ◽  
Vol 240 ◽  
Author(s):  
Emil S. Koteies
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Accurate Determination ◽  
Energy Difference ◽  
Spectroscopic Technique ◽  
Band Offsets ◽  
Band Energy ◽  
Semiconductor Quantum Wells ◽  
Sensitive Function

ABSTRACTWe have developed a novel experimental technique for accurately determining band offsets in semiconductor quantum wells (QW). It is based on the fact that the ground state heavy- hole (HH) band energy is more sensitive to the depth of the valence band well than the light-hole (LH) band energy. Further, it is well known that as a function of the well width, Lz, the energy difference between the LH and HH excitons in a lattice matched, unstrained QW system experiences a maximum. Calculations show that the position, and more importantly, the magnitude of this maximum is a sensitive function of the valence band offset, Qy, which determines the depth of the valence band well. By fitting experimentally measured LH-HH splittings as a function of Lz, an accurate determination of band offsets can be derived. We further reduce the experimental uncertainty by plotting LH-HH as a function of HH energy (which is a function of Lz ) rather than Lz itself, since then all of the relevant parameters can be precisely determined from absorption spectroscopy alone. Using this technique, we have derived the conduction band offsets for several material systems and, where a consensus has developed, have obtained values in good agreement with other determinations.

Deep trap characterisation and conduction band offset determination of AI0.48In0.52As/(Ga0.7AI0.3)0.48In0.52As heterostructures

1997 ◽  
Vol 13 (11) ◽  
pp. 971-973 ◽  
Author(s):  
F. Ducroquet ◽  
G. Jacovetti ◽  
K. Rezzoug ◽  
S. Ababou ◽  
G. Guillot ◽  
...  
Keyword(s):  
Conduction Band ◽  
Deep Trap ◽  
Band Offset ◽  
Conduction Band Offset
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