Microwave ECR plasma electron flood for low pressure wafer charge neutralization

Author(s):  
Bo Vanderberg ◽  
Tomoya Nakatsugawa ◽  
William Divergilio
2003 ◽  
Vol 21 (1) ◽  
pp. 37-40 ◽  
Author(s):  
PHILIP C. EFTHIMION ◽  
ERIK GILSON ◽  
LARRY GRISHAM ◽  
PAVEL KOLCHIN ◽  
RONALD C. DAVIDSON ◽  
...  

Highly ionized plasmas are being considered as a medium for charge neutralizing heavy ion beams in order to focus beyond the space-charge limit. Calculations suggest that plasma at a density of 1–100 times the ion beam density and at a length ∼0.1–2 m would be suitable for achieving a high level of charge neutralization. An Electron Cyclotron Resonance (ECR) source has been built at the Princeton Plasma Physics Laboratory (PPPL) to support a joint Neutralized Transport Experiment (NTX) at the Lawrence Berkeley National Laboratory (LBNL) to study ion beam neutralization with plasma. The ECR source operates at 13.6 MHz and with solenoid magnetic fields of 1–10 gauss. The goal is to operate the source at pressures ∼10−6 Torr at full ionization. The initial operation of the source has been at pressures of 10−4–10−1 Torr. Electron densities in the range of 108 to 1011 cm−3 have been achieved. Low-pressure operation is important to reduce ion beam ionization. A cusp magnetic field has been installed to improve radial confinement and reduce the field strength on the beam axis. In addition, axial confinement is believed to be important to achieve lower-pressure operation. To further improve breakdown at low pressure, a weak electron source will be placed near the end of the ECR source. This article also describes the wave damping mechanisms. At moderate pressures (> 1 mTorr), the wave damping is collisional, and at low pressures (< 1 mTorr) there is a distinct electron cyclotron resonance.


1994 ◽  
Vol 336 ◽  
Author(s):  
Vikram L. Dalai ◽  
E. X. Ping ◽  
Sanjeev Kaushal ◽  
Mark Leonard ◽  
Mohan K. Bhan ◽  
...  

ABSTRACTWe discuss the growth of a-Si:H Materials and devices using a low pressure remote ECR plasma. We show that by using this plasma in an etching mode with a high H flux, we can grow high quality a-Si:H films at high temperatures (325–375 C). These films have significantly improved stability compared to standard a-Si:H films deposited using glow discharge. We can further improve the stability of these films by incorporating minute (sub ppm levels) of boron during growth. We also report on the fabrication of devices at these temperatures using this very reactive plasma. We discuss the precautions taken to obtain good devices, and discuss how the devices can be further improved.


2020 ◽  
Vol 91 (3) ◽  
pp. 033319
Author(s):  
Yaoxiang Jiang ◽  
Shixiang Peng ◽  
Wenbin Wu ◽  
Tenghao Ma ◽  
Jingfeng Zhang ◽  
...  

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