Fabrication and characterization of indium gallium zinc oxide (IGZO) thin film transistors with (La[sub 0.5]Y[sub 0.5])[sub 2]O[sub 3] gate insulator
2013 ◽
Vol 231
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pp. 531-534
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2016 ◽
Vol 5
(5)
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pp. N17-N21
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2009 ◽
Vol 48
(4)
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pp. 04C134
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2015 ◽
Vol 135
(6)
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pp. 192-198
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2011 ◽
Vol 50
(3)
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pp. 03CB06
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