Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors

2016 ◽  
Vol 108 (18) ◽  
pp. 182104 ◽  
Author(s):  
Eungtaek Kim ◽  
Choong-Ki Kim ◽  
Myung Keun Lee ◽  
Tewook Bang ◽  
Yang-Kyu Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Positive Bias ◽  
Zinc Oxide Thin Film ◽  
Bias Stress ◽  
Indium Gallium

Effect of Fluorine in a Gate Insulator on the Reliability of Indium-Gallium-Zinc Oxide Thin-Film Transistors

2016 ◽  
Vol 5 (5) ◽  
pp. N17-N21 ◽  
Author(s):  
Haruka Yamazaki ◽  
Yasuaki Ishikawa ◽  
Mami N. Fujii ◽  
Juan Paolo Bermundo ◽  
Eiji Takahashi ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium

Light/negative bias stress instabilities in indium gallium zinc oxide thin film transistors explained by creation of a double donor

2012 ◽  
Vol 101 (12) ◽  
pp. 123502 ◽  
Author(s):  
Piero Migliorato ◽  
Md Delwar Hossain Chowdhury ◽  
Jae Gwang Um ◽  
Manju Seok ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Negative Bias ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Bias Stress ◽  
Indium Gallium
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