scholarly journals Injection and transport properties of fast electrons in ultraintense laser-solid interactions

2013 ◽  
Vol 20 (4) ◽  
pp. 043104 ◽  
Author(s):  
M. Coury ◽  
D. C. Carroll ◽  
A. P. L. Robinson ◽  
X. H. Yuan ◽  
C. M. Brenner ◽  
...  
Keyword(s):  
Transport Properties ◽  
Fast Electrons ◽  
Laser Solid Interactions

Emission direction of fast electrons in laser-solid interactions at intensities from the nonrelativistic to the relativistic

2004 ◽  
Vol 69 (4) ◽  
Author(s):  
Jun Zhang ◽  
J. Zhang ◽  
Z. M. Sheng ◽  
Y. T. Li ◽  
Y. Qiu ◽  
...  
Keyword(s):  
Fast Electrons ◽  
Laser Solid Interactions

Effect of the Plasma Density Scale Length on the Direction of Fast Electrons in Relativistic Laser-Solid Interactions

2000 ◽  
Vol 84 (7) ◽  
pp. 1459-1462 ◽  
Author(s):  
M. I. K. Santala ◽  
M. Zepf ◽  
I. Watts ◽  
F. N. Beg ◽  
E. Clark ◽  
...  
Keyword(s):  
Plasma Density ◽  
Fast Electrons ◽  
Laser Solid Interactions ◽  
Density Scale ◽  
Scale Length

scholarly journals Proton acceleration by fast electrons in laser–solid interactions

2002 ◽  
Vol 20 (2) ◽  
pp. 243-253 ◽  
Author(s):  
J.R. DAVIES
Keyword(s):  
Electric Field ◽  
Fast Electron ◽  
Proton Energy ◽  
High Energy ◽  
Dimensional Model ◽  
Proton Acceleration ◽  
Fast Electrons ◽  
One Dimensional ◽  
Long Pulse ◽  
Laser Solid Interactions

The emission of high-energy protons in laser–solid interactions and the theories that have been used to explain it are briefly reviewed. To these theories we add a further possibility: the acceleration of protons inside the target by the electric field generated by fast electrons. This is considered using a simple one-dimensional model. It is found that for relativistic laser intensities and sufficiently long pulse durations, the proton energy gain is typically several times the fast electron temperature. The results are very similar to those obtained for proton acceleration by electron expansion into vacuum.

Two-plasmon-decay induced fast electrons in intense femtosecond laser–solid interactions

2020 ◽  
Vol 27 (8) ◽  
pp. 083105
Author(s):  
Prashant Kumar Singh ◽  
Amitava Adak ◽  
Amit D. Lad ◽  
Gourab Chatterjee ◽  
G. Ravindra Kumar
Keyword(s):  
Femtosecond Laser ◽  
Fast Electrons ◽  
Laser Solid Interactions

Spectroscopic Diagnostics of Tokamaks

1988 ◽  
Vol 102 ◽  
pp. 165-174
Author(s):  
C. de Michelis
Keyword(s):  
Transport Properties ◽  
Power Losses ◽  
Spectroscopic Diagnostics ◽  
Important Concern

AbstractImpurities being an important concern in tokamaks, spectroscopy plays a key role in their understanding. Techniques for the evaluation of concentrations, power losses and transport properties are surveyed, and a few developments are outlined.

Design of Sensitive Photographic Materials for the High-Voltage Electron Microscope

1975 ◽  
Vol 33 ◽  
pp. 156-157
Author(s):  
Murray Vernon King ◽  
Donald F. Parsons
Keyword(s):  
Electron Microscope ◽  
Radiation Damage ◽  
High Voltage ◽  
Radiation Sensitivity ◽  
Fast Electrons ◽  
Voltage Electron ◽  
High Voltage Electron Microscope ◽  
High Voltage Electron ◽  
Biological Studies ◽  
Low Sensitivity

Effective application of the high-voltage electron microscope to a wide variety of biological studies has been restricted by the radiation sensitivity of biological systems. The problem of radiation damage has been recognized as a serious factor influencing the amount of information attainable from biological specimens in electron microscopy at conventional voltages around 100 kV. The problem proves to be even more severe at higher voltages around 1 MV. In this range, the problem is the relatively low sensitivity of the existing recording media, which entails inordinately long exposures that give rise to severe radiation damage. This low sensitivity arises from the small linear energy transfer for fast electrons. Few developable grains are created in the emulsion per electron, while most of the energy of the electrons is wasted in the film base.

Structure and Orientation of As Precipitates in LT-MBE Grown GaAs

1991 ◽  
Vol 49 ◽  
pp. 900-901 ◽  
Author(s):  
Alain Claverie ◽  
Zuzanna Liliental-Weber
Keyword(s):  
Transport Properties ◽  
Layer Thickness ◽  
Growth Temperature ◽  
Low Temperatures ◽  
Lattice Parameter ◽  
Crystalline Quality ◽  
Insulating Properties ◽  
Lt Gaas

GaAs layers grown by MBE at low temperatures (in the 200°C range, LT-GaAs) have been reported to have very interesting electronic and transport properties. Previous studies have shown that, before annealing, the crystalline quality of the layers is related to the growth temperature. Lowering the temperature or increasing the layer thickness generally results in some columnar polycrystalline growth. For the best “temperature-thickness” combinations, the layers may be very As rich (up to 1.25%) resulting in an up to 0.15% increase of the lattice parameter, consistent with the excess As. Only after annealing are the technologically important semi-insulating properties of these layers observed. When annealed in As atmosphere at about 600°C a decrease of the lattice parameter to the substrate value is observed. TEM studies show formation of precipitates which are supposed to be As related since the average As concentration remains almost unchanged upon annealing.

High-angle electron scattering from amorphous silicon

1995 ◽  
Vol 53 ◽  
pp. 162-163
Author(s):  
M. Libera ◽  
J.A. Ott ◽  
K. Siangchaew ◽  
L. Tsung
Keyword(s):  
Electron Scattering ◽  
Amorphous Material ◽  
Structural Defects ◽  
Constant Thickness ◽  
High Angle ◽  
Fast Electrons ◽  
Angle Scattering ◽  
Stem Image ◽  
Amorphous Si ◽  
Thermal Vibrations

Channeling occurs when fast electrons follow atomic strings in a crystal where there is a minimum in the potential energy (1). Channeling has a strong effect on high-angle scattering. Deviations in atomic position along a channel due to structural defects or thermal vibrations increase the probability of scattering (2-5). Since there are no extended channels in an amorphous material the question arises: for a given material with constant thickness, will the high-angle scattering be higher from a crystal or a glass?Figure la shows a HAADF STEM image collected using a Philips CM20 FEG TEM/STEM with inner and outer collection angles of 35mrad and lOOmrad. The specimen (6) was a cross section of singlecrystal Si containing: amorphous Si (region A), defective Si containing many stacking faults (B), two coherent Ge layers (CI; C2), and a contamination layer (D). CBED patterns (fig. lb), PEELS spectra, and HAADF signals (fig. lc) were collected at 106K and 300K along the indicated line.

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