scholarly journals The effect of carrier gas pressure on vapor phase nucleation experiments using a thermal diffusion cloud chamber

1999 ◽  
Vol 111 (18) ◽  
pp. 8496-8502 ◽  
Author(s):  
D. Kane ◽  
S. P. Fisenko ◽  
M. Rusyniak ◽  
M. S. El-Shall
Keyword(s):  
Thermal Diffusion ◽  
Vapor Phase ◽  
Gas Pressure ◽  
Cloud Chamber ◽  
Carrier Gas ◽  
Phase Nucleation

scholarly journals The effect of carrier gas pressure and wall heating on the operation of the thermal diffusion cloud chamber

2001 ◽  
Vol 115 (23) ◽  
pp. 10829-10836 ◽  
Author(s):  
Frank T. Ferguson ◽  
Richard H. Heist ◽  
Joseph A. Nuth
Keyword(s):  
Thermal Diffusion ◽  
Gas Pressure ◽  
Cloud Chamber ◽  
Carrier Gas ◽  
Wall Heating

Dense carrier gas effect in vapor phase nucleation

1997 ◽  
Vol 55 (5) ◽  
pp. 5743-5749 ◽  
Author(s):  
Vladimir M. Novikov ◽  
Oleg V. Vasil'ev ◽  
Howard Reiss
Keyword(s):  
Vapor Phase ◽  
Carrier Gas ◽  
Phase Nucleation ◽  
Gas Effect

Downstream Plasma Activated Etching of IIIV Compound Semiconductorsa

1988 ◽  
Vol 144 ◽  
Author(s):  
R. Iyer ◽  
D.L. Lile
Keyword(s):  
Activation Energy ◽  
Apparent Activation Energy ◽  
Mass Spectrometer ◽  
Vapor Phase ◽  
Compound Semiconductors ◽  
Power Input ◽  
Reaction Process ◽  
Rf Power ◽  
Carrier Gas ◽  
Etch Rates

ABSTRACTWe have demonstrated a novel downstream plasma activated vapor phase etching of III-V compound semiconductors using ethylene di bromide as the etchant. Highly reproducible surfaces and etch rates were obtained by monitoring the reaction process with a mass spectrometer. Etch rates on InP of up to 4500Å/min, at temperatures as low as 160°C, at an rf power input of 25 watts were achieved with no evident damage to the surface as indicated by PL measurements. Apparent activation energy measurements seem to suggest that the etch products might be organometallic in nature, in contrast to inorganic etch products seen in most etching studies. Etching is partially anisotropic and resulted in smoother surfaces when H2 was used as the carrier gas for the etchant instead of N2.

Carrier-gas pressure

Nucleation ◽  
2000 ◽  
pp. 330-337
Author(s):  
Dimo Kashchiev
Keyword(s):  
Gas Pressure ◽  
Carrier Gas
Sign in / Sign up

Export Citation Format

Share Document