Transition from Schottky-barrier-determined to channel transport regime with low noise in carbon nanotube field effect transistors

2013 ◽  
Author(s):  
V. A. Sydoruk ◽  
M. V. Petrychuk ◽  
A. Ural ◽  
G. Bosman ◽  
A. Offenhäusser ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Low Noise ◽  
Transport Regime ◽  
Channel Transport

Optimization of Schottky barrier carbon nanotube field effect transistors

2005 ◽  
Vol 81 (2-4) ◽  
pp. 428-433 ◽  
Author(s):  
M. Pourfath ◽  
E. Ungersboeck ◽  
A. Gehring ◽  
B.H. Cheong ◽  
W.J. Park ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistors

scholarly journals High-Frequency Capability of Schottky-Barrier Carbon Nanotube FETs

2007 ◽  
Vol 121-123 ◽  
pp. 693-696 ◽  
Author(s):  
Leonardo C. Castro ◽  
D.L. Pulfrey ◽  
D.L. John
Keyword(s):  
Carbon Nanotube ◽  
Schottky Barrier ◽  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Schottky Contacts ◽  
Small Signal ◽  
Gate Electrode ◽  
Figures Of Merit ◽  
Significant Bias

The high-frequency capability of carbon nanotube field-effect transistors is investigated by simulating the small-signal performance of a device with negative-barrier Schottky contacts for the source and drain, and with a small, ungated region of nanotube between the end contacts and the edge of the wrap-around gate electrode. The overall structure is shown to exhibit resonant behaviour, which leads to a significant bias dependence of the small-signal capacitances and transconductance. This could lead to high-frequency figures of merit (fT and fmax) in the terahertz regime.

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