High-Frequency Capability of Schottky-Barrier Carbon Nanotube FETs
2007 ◽
Vol 121-123
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pp. 693-696
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Keyword(s):
The high-frequency capability of carbon nanotube field-effect transistors is investigated by simulating the small-signal performance of a device with negative-barrier Schottky contacts for the source and drain, and with a small, ungated region of nanotube between the end contacts and the edge of the wrap-around gate electrode. The overall structure is shown to exhibit resonant behaviour, which leads to a significant bias dependence of the small-signal capacitances and transconductance. This could lead to high-frequency figures of merit (fT and fmax) in the terahertz regime.
2009 ◽
Vol 6
(7)
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pp. 1571-1579
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Keyword(s):
2013 ◽
Vol 60
(6)
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pp. 1799-1806
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Keyword(s):
2005 ◽
Vol 81
(2-4)
◽
pp. 428-433
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2012 ◽
Vol 136
(17)
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pp. 174704
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Keyword(s):
2010 ◽
Vol 10
(11)
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pp. 7000-7004
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2010 ◽
Vol 132
(41)
◽
pp. 14429-14436
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