Monte Carlo simulation of a Bonner sphere spectrometer for application to the determination of neutron field in the Experimental Advanced Superconducting Tokamak experimental hall

Neutron Response Function of Bonner Sphere Spectrometer With 6LiI(Eu) Detector. The detector response function was needed to measure the neutron fluence based on the count rates from Bonner Sphere Spectrometer (BSS). The determination of response function of a BSS with 6LiI(Eu) detector has been performed using Monte Carlo MCNPX code. This calculation was performed for BSS using scintillation detector of 4 mm × 4 mm 6LiI(Eu) which is placed at the center of a set of polyethylene spheres i.e bare, 2", 3", 5", 8", 10", and 12" diameters. The BSS response functions were obtained for neutron energy of 1x10-9 MeV - 1x102 MeV in 111 energy bins and each value has an uncertainty less or equal to 2 %. The response function were compared with two response functions reported in the literature i.e IAEA document in Technical Reports Series 403 (TRS-403) and the calculation from Vega-Carrillo, et al. Also validated with measurement 252Cf neutron spectra, that shown the simulated BSS spectra were quite close to the experimental measured with a differrence of 3%.

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Dosimetric assessment and characterisation of the neutron field around a Howitzer container using a Bonner sphere spectrometer, Monte Carlo simulations and the NSDann and NSDUAZ unfolding codes

Radiation Protection Dosimetry ◽

10.1093/rpd/ncs246 ◽

2012 ◽

Vol 154 (3) ◽

pp. 346-355 ◽

Cited By ~ 2

Author(s):

S. Barros ◽

E. Gallego ◽

A. Lorente ◽

I. F. Goncalves ◽

P. Vaz ◽

...

Keyword(s):

Monte Carlo ◽

Monte Carlo Simulations ◽

Neutron Field ◽

Bonner Sphere ◽

Bonner Sphere Spectrometer ◽

Dosimetric Assessment

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Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100134922 ◽

1990 ◽

Vol 48 (2) ◽

pp. 264-265

Author(s):

D. R. Liu ◽

S. S. Shinozaki ◽

R. J. Baird

Keyword(s):

Thin Film ◽

Thin Films ◽

Monte Carlo Simulation ◽

Monte Carlo ◽

Compound Semiconductors ◽

Energy Dispersive Analysis ◽

X Ray ◽

Metastable Alloys ◽

Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

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