Multilevel unipolar resistive switching with negative differential resistance effect in Ag/SiO2/Pt device

2014 ◽  
Vol 116 (15) ◽  
pp. 154509 ◽  
Author(s):  
Haitao Sun ◽  
Qi Liu ◽  
Shibing Long ◽  
Hangbing Lv ◽  
Writam Banerjee ◽  
...  
2017 ◽  
Vol 19 (19) ◽  
pp. 11864-11868 ◽  
Author(s):  
L. J. Wei ◽  
Y. Yuan ◽  
J. Wang ◽  
H. Q. Tu ◽  
Y. Gao ◽  
...  

We demonstrate that a bipolar non-volatile resistive switching behaviour with negative differential resistance (NDR) effect is realized in a Cu/BaTiO3/Ag device, which was deposited on a Si substrate via magnetron sputtering equipment.


2020 ◽  
Vol 22 (10) ◽  
pp. 5819-5825 ◽  
Author(s):  
Xinxin Ran ◽  
Pengfei Hou ◽  
Jiaxun Song ◽  
Hongjia Song ◽  
Xiangli Zhong ◽  
...  

The polarization and interfacial defect modulated NDR effect shows good reproducibility for hundreds of cycles in h-LuFeO3/CoFe2O4 heterojunction-based RS devices.


2021 ◽  
Vol 9 (39) ◽  
pp. 13755-13760
Author(s):  
Songcheng Hu ◽  
Zhenhua Tang ◽  
Li Zhang ◽  
Dijie Yao ◽  
Zhigang Liu ◽  
...  

The new effects induced by light in materials have important potential applications in optoelectronic multifunctional electronic devices.


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