Bipolar resistive switching with negative differential resistance effect in a Cu/BaTiO3/Ag device

2017 ◽  
Vol 19 (19) ◽  
pp. 11864-11868 ◽  
Author(s):  
L. J. Wei ◽  
Y. Yuan ◽  
J. Wang ◽  
H. Q. Tu ◽  
Y. Gao ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Resistive Switching ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Si Substrate ◽  
Bipolar Resistive Switching ◽  
Switching Behaviour ◽  
Negative Differential Resistance Effect

We demonstrate that a bipolar non-volatile resistive switching behaviour with negative differential resistance (NDR) effect is realized in a Cu/BaTiO3/Ag device, which was deposited on a Si substrate via magnetron sputtering equipment.

Effects of Annealing Temperature on Resistance Switching Properties of ZnMn2O4 Films Deposited by Magnetron Sputtering

2015 ◽  
Vol 778 ◽  
pp. 88-91
Author(s):  
Hua Wang ◽  
Zhi Da Li ◽  
Ji Wen Xu ◽  
Yu Pei Zhang ◽  
Ling Yang
Keyword(s):  
Magnetron Sputtering ◽  
Resistive Switching ◽  
Spinel Structure ◽  
Annealing Temperature ◽  
Resistance Switching ◽  
Switching Behavior ◽  
Si Substrate ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching

ZnMn2O4films were fabricated on p-Si substrate by magnetron sputtering. The effects of annealing temperature on microstructure, resistance switching properties and endurance characteristics of ZnMn2O4films were investigated. The ZnMn2O4films with a structure of Ag/ZnMn2O4/p-Si exhibit bipolar resistive switching behavior. The results indicated that the annealing temperature has not changed its spinel structure, the bipolar resistance behavior and endurance characteristics, but the grain become more and more large, arranged closed and distributed evenly with the increase of annealing temperature from 450°C to 750°C. The ZnMn2O4films annealed at 600°C have the biggestRHRS/RLRSratio, the lowestVONandVOFF. TheRHRS/RLRSratios of all specimens maintain at about 103after successive 1000 switching cycles, which indicated that the Ag/ZnMn2O4/p-Si device has better endurance characteristics.

Negative differential resistance effect in resistive switching devices based on h-LuFeO3/CoFe2O4 heterojunctions

2020 ◽  
Vol 22 (10) ◽  
pp. 5819-5825 ◽  
Author(s):  
Xinxin Ran ◽  
Pengfei Hou ◽  
Jiaxun Song ◽  
Hongjia Song ◽  
Xiangli Zhong ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Good Reproducibility ◽  
Interfacial Defect ◽  
Negative Differential Resistance Effect ◽  
Switching Devices

The polarization and interfacial defect modulated NDR effect shows good reproducibility for hundreds of cycles in h-LuFeO3/CoFe2O4 heterojunction-based RS devices.

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