Photo-induced negative differential resistance and carrier-transport mechanisms in Bi2FeCrO6 resistive switching memory devices

Carrier Transport ◽

Electronic Devices ◽

Differential Resistance ◽

Memory Devices ◽

Transport Mechanisms ◽

Potential Applications ◽

The new effects induced by light in materials have important potential applications in optoelectronic multifunctional electronic devices.

Photo-induced negative differential resistance in a resistive switching memory device based on BiFeO3/ZnO heterojunctions

Applied Materials Today ◽

10.1016/j.apmt.2018.11.007 ◽

2019 ◽

Vol 14 ◽

pp. 21-28 ◽

Cited By ~ 22

Author(s):

Pingping Zheng ◽

Bai Sun ◽

Yuanzheng Chen ◽

Hosameldeen Elshekh ◽

Tian Yu ◽

...

Keyword(s):

Resistive Switching ◽

Differential Resistance ◽

Memory Device ◽

Light-induced negative differential resistance effect in a resistive switching memory device

Current Applied Physics ◽

10.1016/j.cap.2019.12.008 ◽

2020 ◽

Vol 20 (3) ◽

pp. 371-378 ◽

Cited By ~ 1

Author(s):

Xiaojun Wang ◽

Yuanyang Wang ◽

Ming Feng ◽

Kaiyue Wang ◽

Pinbo Bai ◽

...

Keyword(s):

Resistive Switching ◽

Differential Resistance ◽

Memory Device ◽

Negative Differential Resistance Effect ◽

Existence of Resistive Switching Memory and Negative Differential Resistance State in Self-Colored MoS2/ZnO Heterojunction Devices

ACS Applied Electronic Materials ◽

10.1021/acsaelm.8b00070 ◽

2019 ◽

Vol 1 (3) ◽

pp. 318-324 ◽

Cited By ~ 22

Author(s):

Mayameen S. Kadhim ◽

Feng Yang ◽

Bai Sun ◽

Wentao Hou ◽

Haixia Peng ◽

...

Keyword(s):

Resistive Switching ◽

Differential Resistance ◽

Heterojunction Devices ◽

Resistance State ◽

Coexistence of Negative Differential Resistance and Resistive Switching Memory at Room Temperature in TiO x Modulated by Moisture

Advanced Electronic Materials ◽

10.1002/aelm.201700567 ◽

2018 ◽

Vol 4 (4) ◽

pp. 1700567 ◽

Cited By ~ 67

Author(s):

Guangdong Zhou ◽

Shukai Duan ◽

Ping Li ◽

Bai Sun ◽

Bo Wu ◽

...

Keyword(s):

Resistive Switching ◽

Room Temperature ◽

Differential Resistance ◽

A resistive switching memory device with a negative differential resistance at room temperature

Applied Physics Letters ◽

10.1063/1.5037191 ◽

2018 ◽

Vol 113 (5) ◽

pp. 053502 ◽

Cited By ~ 19

Author(s):

Mayameen S. Kadhim ◽

Feng Yang ◽

Bai Sun ◽

Yushu Wang ◽

Tao Guo ◽

...

Keyword(s):

Resistive Switching ◽

Room Temperature ◽

Differential Resistance ◽

Memory Device ◽

Interface State-Induced Negative Differential Resistance Observed in Hybrid Perovskite Resistive Switching Memory

ACS Applied Materials & Interfaces ◽

10.1021/acsami.8b07850 ◽

2018 ◽

Vol 10 (25) ◽

pp. 21755-21763 ◽

Cited By ~ 30

Author(s):

Hanlu Ma ◽

Wei Wang ◽

Haiyang Xu ◽

Zhongqiang Wang ◽

Ye Tao ◽

...

Keyword(s):

Resistive Switching ◽

Differential Resistance ◽

Interface State ◽

Hybrid Perovskite ◽

Spray-Coated, Volatile and Nonvolatile, Two-Terminal, Resistive Switching Memory Devices Comprising Liquid-Exfoliated Black Phosphorus and Graphene Layers

IEEE Transactions on Electron Devices ◽

10.1109/ted.2020.3029552 ◽

2020 ◽

Vol 67 (12) ◽

pp. 5484-5489

Author(s):

Yooyeon Jo ◽

Christos Dimitrakopoulos

Keyword(s):

Resistive Switching ◽

Black Phosphorus ◽

Memory Devices ◽

Graphene Layers ◽

Characterization of SiOx/HfOx Bilayer Resistive-Switching Memory Devices

ECS Transactions ◽

10.1149/07202.0025ecst ◽

2016 ◽

Vol 72 (2) ◽

pp. 25-33 ◽

Cited By ~ 4

Author(s):

Y.-C. Chen ◽

Y.-F. Chang ◽

X. Wu ◽

M. Guo ◽

B. Fowler ◽

...

Keyword(s):

Resistive Switching ◽

Memory Devices ◽

All-inorganic perovskite Cs4PbBr6 thin films in optoelectronic resistive switching memory devices with a logic application

Ceramics International ◽

10.1016/j.ceramint.2018.12.038 ◽

2019 ◽

Vol 45 (5) ◽

pp. 5724-5730 ◽

Cited By ~ 9

Author(s):

Huaizu Cai ◽

Meimei Lao ◽

Jun Xu ◽

Yukai Chen ◽

Chujie Zhong ◽

...

Keyword(s):

Thin Films ◽

Resistive Switching ◽

Memory Devices ◽

Inorganic Perovskite ◽

Top-Down Synthesis of Hollow Graphene Nanostructures for Use in Resistive Switching Memory Devices

Advanced Electronic Materials ◽

10.1002/aelm.201700264 ◽

2017 ◽

Vol 3 (10) ◽

pp. 1700264 ◽

Cited By ~ 4

Author(s):

Gopinathan Anoop ◽

Tae Yeon Kim ◽

Hye Jeong Lee ◽

Varij Panwar ◽

Jeong Hun Kwak ◽

...

Keyword(s):

Resistive Switching ◽

Memory Devices ◽

Top Down ◽

Switching Memory ◽

Graphene Nanostructures