Light-induced negative differential resistance effect in a resistive switching memory device

2020 ◽  
Vol 20 (3) ◽  
pp. 371-378 ◽  
Author(s):  
Xiaojun Wang ◽  
Yuanyang Wang ◽  
Ming Feng ◽  
Kaiyue Wang ◽  
Pinbo Bai ◽  
...  
2018 ◽  
Vol 113 (5) ◽  
pp. 053502 ◽  
Author(s):  
Mayameen S. Kadhim ◽  
Feng Yang ◽  
Bai Sun ◽  
Yushu Wang ◽  
Tao Guo ◽  
...  

2021 ◽  
Vol 9 (39) ◽  
pp. 13755-13760
Author(s):  
Songcheng Hu ◽  
Zhenhua Tang ◽  
Li Zhang ◽  
Dijie Yao ◽  
Zhigang Liu ◽  
...  

The new effects induced by light in materials have important potential applications in optoelectronic multifunctional electronic devices.


2017 ◽  
Vol 5 (37) ◽  
pp. 9799-9805 ◽  
Author(s):  
Guilin Chen ◽  
Peng Zhang ◽  
Lulu Pan ◽  
Lin Qi ◽  
Fucheng Yu ◽  
...  

A non-volatile resistive switching memory effect was observed in flexible memory device based on SrTiO3 nanosheets and polyvinylpyrrolidone composites.


2015 ◽  
Vol 54 (2) ◽  
pp. 021802 ◽  
Author(s):  
Lifeng Liu ◽  
Di Yu ◽  
Wenjia Ma ◽  
Bing Chen ◽  
Feifei Zhang ◽  
...  

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