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Role of shallow Si/SiO2 interface states on high frequency channel noise in n-channel metal-oxide-semiconductor field effect transistors
Applied Physics Letters
◽
10.1063/1.3231924
◽
2009
◽
Vol 95
(12)
◽
pp. 123508
◽
Cited By ~ 1
Keyword(s):
Metal Oxide
◽
High Frequency
◽
Field Effect
◽
Field Effect Transistors
◽
Interface States
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Channel Noise
◽
Frequency Channel
Download Full-text
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References
Selectively silicided vertical power double-diffused metal–oxide semiconductor field effect transistors for high-frequency power switching applications
Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena
◽
10.1116/1.584170
◽
1988
◽
Vol 6
(6)
◽
pp. 1740
◽
Cited By ~ 3
Author(s):
K. Shenai
Keyword(s):
Metal Oxide
◽
High Frequency
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
High Frequency Power
◽
Power Switching
◽
Frequency Power
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Assessment of hot‐hole‐induced interface states and trapped carriers in submicronn(metal–oxide semiconductor field effect transistors) by gate‐to‐drain capacitance measurement
Applied Physics Letters
◽
10.1063/1.112121
◽
1994
◽
Vol 65
(9)
◽
pp. 1139-1141
◽
Cited By ~ 2
Author(s):
R. Ghodsi
◽
Y. T. Yeow
◽
M. K. Alam
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Interface States
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Capacitance Measurement
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Three-dimensional simulations of ultrasmall metal–oxide–semiconductor field-effect transistors: The role of the discrete impurities on the device terminal characteristics
Journal of Applied Physics
◽
10.1063/1.1453510
◽
2002
◽
Vol 91
(6)
◽
pp. 3737-3740
◽
Cited By ~ 21
Author(s):
W. J. Gross
◽
D. Vasileska
◽
D. K. Ferry
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Three Dimensional
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Three Dimensional Simulations
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High-frequency noise in nanoscale metal oxide semiconductor field effect transistors
Journal of Applied Physics
◽
10.1063/1.2740345
◽
2007
◽
Vol 101
(12)
◽
pp. 124501
◽
Cited By ~ 22
Author(s):
Reza Navid
◽
Christoph Jungemann
◽
Thomas H. Lee
◽
Robert W. Dutton
Keyword(s):
Metal Oxide
◽
High Frequency
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Frequency Noise
◽
High Frequency Noise
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High frequency and noise model of gate-all-around metal-oxide-semiconductor field-effect transistors
Journal of Applied Physics
◽
10.1063/1.3093884
◽
2009
◽
Vol 105
(7)
◽
pp. 074505
◽
Cited By ~ 6
Author(s):
B. Nae
◽
A. Lazaro
◽
B. Iniguez
Keyword(s):
Metal Oxide
◽
High Frequency
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Noise Model
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The role of Si orientation and temperature on the carrier mobility in metal oxide semiconductor field-effect transistors with ultrathin HfO2 gate dielectrics
Journal of Applied Physics
◽
10.1063/1.2210627
◽
2006
◽
Vol 100
(1)
◽
pp. 014504
◽
Cited By ~ 38
Author(s):
B. Mereu
◽
C. Rossel
◽
E. P. Gusev
◽
M. Yang
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Carrier Mobility
◽
Gate Dielectrics
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
Download Full-text
Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal–Oxide–Semiconductor Structures
Semiconductors
◽
10.1134/s1063782618020203
◽
2018
◽
Vol 52
(2)
◽
pp. 242-247
◽
Cited By ~ 1
Author(s):
S. E. Tyaginov
◽
A. A. Makarov
◽
M. Jech
◽
M. I. Vexler
◽
J. Franco
◽
...
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Interface States
◽
Metal Oxide Semiconductor
◽
Charge Carriers
◽
Oxide Semiconductor
◽
Semiconductor Structures
◽
Self Consistent
◽
Physical Principles
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On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors
Journal of Applied Physics
◽
10.1063/1.3669490
◽
2011
◽
Vol 110
(12)
◽
pp. 124503
◽
Cited By ~ 2
Author(s):
S. M. Thomas
◽
M. J. Prest
◽
T. E. Whall
◽
D. R. Leadley
◽
P. Toniutti
◽
...
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Coulomb Scattering
◽
Hafnium Silicate
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Modeling of Degradation Effects on the High Frequency Noise of Metal–Oxide–Semiconductor Field-Effect Transistors
Japanese Journal of Applied Physics
◽
10.1143/jjap.44.38
◽
2005
◽
Vol 44
(1A)
◽
pp. 38-43
◽
Cited By ~ 4
Author(s):
Heng-Fa Teng
◽
S.-L. Jang
◽
M.-H. Juang
Keyword(s):
Metal Oxide
◽
High Frequency
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Frequency Noise
◽
High Frequency Noise
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Post‐irradiation cracking of H2and formation of interface states in irradiated metal‐oxide‐semiconductor field‐effect transistors
Journal of Applied Physics
◽
10.1063/1.353348
◽
1993
◽
Vol 73
(2)
◽
pp. 658-667
◽
Cited By ~ 148
Author(s):
R. E. Stahlbush
◽
A. H. Edwards
◽
D. L. Griscom
◽
B. J. Mrstik
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Interface States
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Post Irradiation
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