Influences of group-III source preflow on the polarity, optical, and structural properties of GaN grown on nitridated sapphire substrates by metal-organic chemical vapor deposition

2015 ◽  
Vol 117 (12) ◽  
pp. 125305 ◽  
Author(s):  
Chengguo Li ◽  
Hongfei Liu ◽  
Soo Jin Chua
Keyword(s):  
Chemical Vapor Deposition ◽  
Structural Properties ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Group Iii ◽  
Sapphire Substrates ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Research on the Cleaning Technology of Sapphire Substrates Precision Process for LED

2012 ◽  
Vol 452-453 ◽  
pp. 1415-1419
Author(s):  
Hai Zhou ◽  
Li Gang Bei ◽  
Yue Zang ◽  
Xiao Ming Xu ◽  
Zi Guo Zuo
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Sapphire Substrates ◽  
International Production ◽  
Cleaning Solution ◽  
Metal Organic ◽  
Cleaning Technology ◽  
Organic Chemical Vapor Deposition

The signification of the cleaning of sapphire substrates in precision processing has been presented. The cleaning principles of sapphire substrates have been discussed. The cleaning solution and technology of the sapphire substrates for international production have been presented by cleaning experiments. The size of dust is smaller than 0.13 . The sum of dusts is less than 5 for every substrate. Sapphire substrates can be used in metal organic chemical vapor deposition of GaN without re-cleaning by this method.

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