Optical properties of single wurtzite/zinc-blende ZnSe nanowires grown at low temperature

2015 ◽  
Vol 118 (9) ◽  
pp. 095702 ◽  
Author(s):  
V. Zannier ◽  
T. Cremel ◽  
A. Artioli ◽  
D. Ferrand ◽  
K. Kheng ◽  
...  
Author(s):  
T. S. Cheng ◽  
C. T. Foxon ◽  
N. J Jeffs ◽  
O. H. Hughes ◽  
B. G. Ren ◽  
...  

Films of GaN have been grown using a modified MBE method in which the active nitrogen is supplied from an RF activated plasma source. Wurtzite films grown on (0 0 1) oriented GaAs substrates show highly defective, ordered polycrystalline growth with a columnar structure; the (0 0 0 1) planes of the layers being parallel to the (0 0 1) planes of the GaAs substrate. Films grown using a coincident As flux, however, have a single crystal zinc-blende growth mode. They have better structural and optical properties. To improve the properties of the wurtzite films we have studied the growth of such films on (1 1 1)A and (1 1 1)B oriented GaAs substrates. The improved structural properties of such films, assessed using x-ray and TEM methods, correlate with better low temperature PL performance.


2010 ◽  
Vol 171 (1-3) ◽  
pp. 11-15 ◽  
Author(s):  
Buyong Wan ◽  
Chenguo Hu ◽  
Bin Feng ◽  
Jing Xu ◽  
Yan Zhang ◽  
...  

1991 ◽  
Vol 69 (11) ◽  
pp. 7942-7944 ◽  
Author(s):  
K. T. Shiralagi ◽  
R. A. Puechner ◽  
K. Y. Choi ◽  
R. Droopad ◽  
G. N. Maracas

2011 ◽  
Vol 509 (7) ◽  
pp. 3306-3309 ◽  
Author(s):  
H.W. Zhu ◽  
P.G. Li ◽  
M. Lei ◽  
L.H. Li ◽  
S.L. Wang ◽  
...  
Keyword(s):  

2015 ◽  
Vol 252 (4) ◽  
pp. 670-677 ◽  
Author(s):  
C. M. Duque ◽  
A. L. Morales ◽  
M. E. Mora-Ramos ◽  
C. A. Duque

2011 ◽  
Author(s):  
Richard Cisek ◽  
Nehad Hirmiz ◽  
Ankur Saxena ◽  
Alexander Shik ◽  
Harry E. Ruda ◽  
...  

2018 ◽  
Vol 29 (24) ◽  
pp. 20942-20951
Author(s):  
J. A. Cuervo-Farfán ◽  
C. A. Parra Vargas ◽  
D. S. F. Viana ◽  
F. P. Milton ◽  
D. Garcia ◽  
...  

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