Hopping conduction in p-type MoS2 near the critical regime of the metal-insulator transition

2015 ◽  
Vol 107 (22) ◽  
pp. 223107 ◽  
Author(s):  
Tae-Eon Park ◽  
Joonki Suh ◽  
Dongjea Seo ◽  
Joonsuk Park ◽  
Der-Yuh Lin ◽  
...  
1996 ◽  
Vol 77 (19) ◽  
pp. 4058-4061 ◽  
Author(s):  
K. M. Itoh ◽  
E. E. Haller ◽  
J. W. Beeman ◽  
W. L. Hansen ◽  
J. Emes ◽  
...  

2013 ◽  
Vol 27 (04) ◽  
pp. 1350029 ◽  
Author(s):  
R. V. VOVK ◽  
Z. F. NAZYROV ◽  
I. L. GOULATIS ◽  
A. CHRONEOS ◽  
V. M. PINTO SIMOES

The influence of praseodymium doping on the electrical resistivity in the ab-plane of Y 1-z Pr z Ba 2 Cu 3 O 7-δ single crystals, is investigated. It is determined that as the concentration of praseodymium (0.0 ≤ z ≤ 0.5) is rising there occurs a significant shift of the temperature regions, corresponding to the metal–insulator transitions, as well as to the regime of the implementation of the pseudogap anomaly. The part of the curves related to the metal–insulator transition are well described by means of an asymptotic dependence that corresponds to the implementation of a quantum critical regime in the system, the so-called law of the "one third".


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