scholarly journals An amorphous phase formation at palladium / silicon oxide (Pd/SiOx) interface through electron irradiation - electronic excitation process

AIP Advances ◽  
2015 ◽  
Vol 5 (11) ◽  
pp. 117145 ◽  
Author(s):  
Takeshi Nagase ◽  
Ryo Yamashita ◽  
Atsushi Yabuuchi ◽  
Jung-Goo Lee
1983 ◽  
Vol 77 (3-4) ◽  
pp. 273-293 ◽  
Author(s):  
J. L. Brimhall ◽  
H. E. Kissinger ◽  
L. A. Charlot

1988 ◽  
Vol 100 ◽  
Author(s):  
K. Maex ◽  
R. F. De Keersmaecker ◽  
M. Van rossum ◽  
W. F. Van Der Weg

ABSTRACTThe amorphous phaseformation in Ti-Si bilayers upon ion mixing at elevated temperatures and in Ti-Si multilayers upon thermal treatment was studied. In the case of ion mixing with 5×1015 cm−2 Xe atoms at temperatures around 240°C a 100nm thick amorphous Ti-Si alloy is formed with a very homogeneous Ti:Si=3 :4 composition. Thermal treatment of the Ti-Si multilayer structure at similar temperatures also yields amorphous silicide layers. The results are interpreted according to the evolution in a planar binary diffusion couple, where the Si and Ti concentrations in the reacted layer are dictated by thermodynamic and kinetic arguments.


1986 ◽  
Vol 21 (11) ◽  
pp. 4029-4034 ◽  
Author(s):  
R. K. Ball ◽  
W. G. Freeman ◽  
A. J. Taylor ◽  
A. G. Todd

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