Amorphous phase formation in ion implanted cobalt

Author(s):  
Wen-Zhi Li ◽  
Zaki Al-Tamimi ◽  
W.A. Grant

1983 ◽  
Vol 27 ◽  
Author(s):  
C.A. Hewett ◽  
I. Suni ◽  
S.S. Lau ◽  
L.S. Hung ◽  
D.M. Scott

ABSTRACTIon implantation induced phase transformations and recrystallization during post-annealing in CoSi2, CrSi2, and Pd2Si are studied. All three silicides are found to reorder at about 1/3 the melting point of the silicide. We speculate that ion-implanted silicides recrystallize by the same mechanism and that amorphous phases produced by implantation are unstable rather than metastable.







1989 ◽  
Vol 8 (12) ◽  
pp. 1393-1394 ◽  
Author(s):  
Masahiro Kitada ◽  
Noboru Shimizu ◽  
Teruho Shimotsu


1983 ◽  
Vol 77 (3-4) ◽  
pp. 273-293 ◽  
Author(s):  
J. L. Brimhall ◽  
H. E. Kissinger ◽  
L. A. Charlot


1988 ◽  
Vol 100 ◽  
Author(s):  
K. Maex ◽  
R. F. De Keersmaecker ◽  
M. Van rossum ◽  
W. F. Van Der Weg

ABSTRACTThe amorphous phaseformation in Ti-Si bilayers upon ion mixing at elevated temperatures and in Ti-Si multilayers upon thermal treatment was studied. In the case of ion mixing with 5×1015 cm−2 Xe atoms at temperatures around 240°C a 100nm thick amorphous Ti-Si alloy is formed with a very homogeneous Ti:Si=3 :4 composition. Thermal treatment of the Ti-Si multilayer structure at similar temperatures also yields amorphous silicide layers. The results are interpreted according to the evolution in a planar binary diffusion couple, where the Si and Ti concentrations in the reacted layer are dictated by thermodynamic and kinetic arguments.



2019 ◽  
Vol 41 (9) ◽  
pp. 1205-1216 ◽  
Author(s):  
A. I. Karasevskii ◽  
◽  
A. Yu. Naumuk ◽  


1986 ◽  
Vol 21 (11) ◽  
pp. 4029-4034 ◽  
Author(s):  
R. K. Ball ◽  
W. G. Freeman ◽  
A. J. Taylor ◽  
A. G. Todd






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