scholarly journals Threading dislocation movement in AlGaN/GaN-on-Si high electron mobility transistors under high temperature reverse bias stressing

AIP Advances ◽  
2016 ◽  
Vol 6 (9) ◽  
pp. 095102 ◽  
Author(s):  
W. A. Sasangka ◽  
G. J. Syaranamual ◽  
R. I. Made ◽  
C. V. Thompson ◽  
C. L. Gan
Keyword(s):  
High Temperature ◽  
Electron Mobility ◽  
Reverse Bias ◽  
High Electron Mobility Transistors ◽  
Threading Dislocation ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Dislocation Movement ◽  
Gan On Si

Trapping Effects Dependence on Electron Confinement in Ultrashort GaN-on-Si High-Electron-Mobility Transistors

2012 ◽  
Vol 5 (3) ◽  
pp. 034103
Author(s):  
Farid Medjdoub ◽  
Damien Ducatteau ◽  
Malek Zegaoui ◽  
Bertrand Grimbert ◽  
Nathalie Rolland ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Confinement ◽  
Electron Mobility Transistors ◽  
Gan On Si ◽  
Trapping Effects

Deeply-scaled GaN-on-Si high electron mobility transistors with record cut-off frequency f T of 310 GHz

2019 ◽  
Vol 12 (12) ◽  
pp. 126506 ◽  
Author(s):  
Hanlin Xie ◽  
Zhihong Liu ◽  
Yu Gao ◽  
Kumud Ranjan ◽  
Kenneth E. Lee ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Gan On Si
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