Trapping Effects Dependence on Electron Confinement in Ultrashort GaN-on-Si High-Electron-Mobility Transistors
2021 ◽
Vol 135
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pp. 106109
2016 ◽
Vol 213
(5)
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pp. 1222-1228
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2014 ◽
2013 ◽
Vol 66
◽
pp. 63-70
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