Magnetization switching in the BiFe0.9Mn0.1O3 thin films modulated by resistive switching process

2016 ◽  
Vol 109 (11) ◽  
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Author(s):  
Guangyi Chen ◽  
Guifeng Bi ◽  
Lin Song ◽  
Yakui Weng ◽  
Danfeng Pan ◽  
...  
2012 ◽  
Vol 27 (3) ◽  
pp. 323-326
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Zhen-Guo JI ◽  
Jun-Jie WANG ◽  
Qi-Nan MAO ◽  
Jun-Hua XI

2021 ◽  
Vol 9 (13) ◽  
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Chao Yun ◽  
Matthew Webb ◽  
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Ming Xiao ◽  
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Interfacial resistive switching and composition-tunable RLRS are realized in ionically conducting Na0.5Bi0.5TiO3 thin films, allowing optimised ON/OFF ratio (>104) to be achieved with low growth temperature (600 °C) and low thickness (<20 nm).


2010 ◽  
Vol 13 (12) ◽  
pp. H443 ◽  
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Kuyyadi P. Biju ◽  
Xinjun Liu ◽  
El Mostafa Bourim ◽  
Insung Kim ◽  
Seungjae Jung ◽  
...  

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Jun Li ◽  
Xin-Gui Tang ◽  
Qiu-Xiang Liu ◽  
Yan-Ping Jiang ◽  
Wen-Hua Li ◽  
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2007 ◽  
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pp. 012907 ◽  
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Kyung Min Kim ◽  
Byung Joon Choi ◽  
Yong Cheol Shin ◽  
Seol Choi ◽  
Cheol Seong Hwang

2021 ◽  
Vol 118 (6) ◽  
pp. 062402
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Ke Tang ◽  
Zhenchao Wen ◽  
Yong-Chang Lau ◽  
Hiroaki Sukegawa ◽  
Takeshi Seki ◽  
...  

2011 ◽  
Vol 126 (1) ◽  
pp. 117-124 ◽  
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Sergio Almeida ◽  
Brandon Aguirre ◽  
Noel Marquez ◽  
John McClure ◽  
David Zubia

2014 ◽  
Vol 104 (14) ◽  
pp. 143502 ◽  
Author(s):  
Wei Hu ◽  
Lilan Zou ◽  
Ruqi Chen ◽  
Wei Xie ◽  
Xinman Chen ◽  
...  

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