scholarly journals Upscaling high-quality CVD graphene devices to 100 micron-scale and beyond

2017 ◽  
Vol 110 (11) ◽  
pp. 113502 ◽  
Author(s):  
Timothy J. Lyon ◽  
Jonas Sichau ◽  
August Dorn ◽  
Amaia Zurutuza ◽  
Amaia Pesquera ◽  
...  
Keyword(s):  
High Quality ◽  
Cvd Graphene ◽  
Graphene Devices

scholarly journals Lithography-free fabrication of high quality substrate-supported and freestanding graphene devices

Nano Research ◽  
2010 ◽  
Vol 3 (2) ◽  
pp. 98-102 ◽  
Author(s):  
Wenzhong Bao ◽  
Gang Liu ◽  
Zeng Zhao ◽  
Hang Zhang ◽  
Dong Yan ◽  
...  
Keyword(s):  
High Quality ◽  
Graphene Devices

scholarly journals Spin Transport in High-Quality Suspended Graphene Devices

Nano Letters ◽  
2012 ◽  
Vol 12 (7) ◽  
pp. 3512-3517 ◽  
Author(s):  
Marcos H. D. Guimarães ◽  
A. Veligura ◽  
P. J. Zomer ◽  
T. Maassen ◽  
I. J. Vera-Marun ◽  
...  
Keyword(s):  
Spin Transport ◽  
High Quality ◽  
Suspended Graphene ◽  
Graphene Devices

scholarly journals TOWARDS BALLISTIC TRANSPORT IN GRAPHENE

2008 ◽  
Vol 22 (25n26) ◽  
pp. 4579-4588 ◽  
Author(s):  
XU DU ◽  
IVAN SKACHKO ◽  
EVA Y. ANDREI
Keyword(s):  
Building Block ◽  
Graphene Layer ◽  
Ballistic Transport ◽  
Full Potential ◽  
High Quality ◽  
Extrinsic Factors ◽  
Material Defects ◽  
Theoretical Predictions ◽  
Graphene Devices

Graphene is a fascinating material for exploring fundamental science questions as well as a potential building block for novel electronic applications. In order to realize the full potential of this material the fabrication techniques of graphene devices, still in their infancy, need to be refined to better isolate the graphene layer from the environment. We present results from a study on the influence of extrinsic factors on the quality of graphene devices including material defects, lithography, doping by metallic leads and the substrate. The main finding is that trapped Coulomb scatterers associated with the substrate are the primary factor reducing the quality of graphene devices. A fabrication scheme is proposed to produce high quality graphene devices dependably and reproducibly. In these devices, the transport properties approach theoretical predictions of ballistic transport.

scholarly journals High-Quality Multiterminal Suspended Graphene Devices

Nano Letters ◽  
2013 ◽  
Vol 13 (11) ◽  
pp. 5165-5170 ◽  
Author(s):  
Dong-Keun Ki ◽  
Alberto F. Morpurgo
Keyword(s):  
High Quality ◽  
Suspended Graphene ◽  
Graphene Devices

Room temperature dry processing of patterned CVD graphene devices

Carbon ◽  
2015 ◽  
Vol 86 ◽  
pp. 256-263 ◽  
Author(s):  
Ather Mahmood ◽  
Cheol-Soo Yang ◽  
Jean-François Dayen ◽  
Serin Park ◽  
M. Venkata Kamalakar ◽  
...  
Keyword(s):  
Room Temperature ◽  
Cvd Graphene ◽  
Dry Processing ◽  
Graphene Devices

scholarly journals Random Strain Fluctuations as Dominant Disorder Source for High-Quality On-Substrate Graphene Devices

2014 ◽  
Vol 4 (4) ◽  
Author(s):  
Nuno J. G. Couto ◽  
Davide Costanzo ◽  
Stephan Engels ◽  
Dong-Keun Ki ◽  
Kenji Watanabe ◽  
...  
Keyword(s):  
High Quality ◽  
Graphene Devices

scholarly journals Effects of post-lithography cleaning on the yield and performance of CVD graphene-based devices

2019 ◽  
Vol 10 ◽  
pp. 349-355 ◽  
Author(s):  
Eduardo Nery Duarte de Araujo ◽  
Thiago Alonso Stephan Lacerda de Sousa ◽  
Luciano de Moura Guimarães ◽  
Flavio Plentz
Keyword(s):  
Electrical Transport ◽  
Large Scale ◽  
Scale Production ◽  
Production Methods ◽  
Cvd Graphene ◽  
Large Scale Production ◽  
Conventional Production ◽  
Protection Layer ◽  
And Performance ◽  
Graphene Devices

The large-scale production of high-quality and clean graphene devices, aiming at technological applications, has been a great challenge over the last decade. This is due to the high affinity of graphene with polymers that are usually applied in standard lithography processes and that, inevitably, modify the electrical proprieties of graphene. By Raman spectroscopy and electrical-transport investigations, we correlate the room-temperature carrier mobility of graphene devices with the size of well-ordered domains in graphene. In addition, we show that the size of these well-ordered domains is highly influenced by post-photolithography cleaning processes. Finally, we show that by using poly(dimethylglutarimide) (PMGI) as a protection layer, the production yield of CVD graphene devices is enhanced. Conversely, their electrical properties are deteriorated as compared with devices fabricated by conventional production methods.

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