Two-dimensional electrons in an AlAs quantum well occupy multiple conduction-band minima at the X-points of the Brillouin zone. These valleys have large effective mass and g-factor compared to the standard GaAs electrons, and are highly anisotropic. With proper choice of well width and by applying symmetry-breaking strain in the plane, one can control the occupation of different valleys thus rendering a system with tuneable effective mass, g-factor, Fermi contour anisotropy, and valley degeneracy. Here we review some of the rich physics that this system has allowed us to explore.
Tuning of Fermi contour anisotropy in GaAs (001) 2D holes via strain
