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2021 ◽  
Vol 127 (5) ◽  
Author(s):  
K. A. Villegas Rosales ◽  
P. T. Madathil ◽  
Y. J. Chung ◽  
L. N. Pfeiffer ◽  
K. W. West ◽  
...  

2019 ◽  
Vol 3 (4) ◽  
pp. 132-136
Author(s):  
Volodymyr Kravchenko ◽  
Volodymyr Knyazev ◽  
Aleksandr Serkov ◽  
Vitaliy Breslavets ◽  
Igor Yakovenko

Solar RRL ◽  
2018 ◽  
Vol 3 (2) ◽  
pp. 1800274 ◽  
Author(s):  
Like Huang ◽  
Shixiao Bu ◽  
Danli Zhang ◽  
Ruixiang Peng ◽  
Qiang Wei ◽  
...  

2016 ◽  
Vol 20 (1) ◽  
pp. 179-187 ◽  
Author(s):  
SeongMin Kim ◽  
Jaewook Ha ◽  
Hyeok Kim ◽  
Jin-Baek Kim

AbstractWe analytically and numerically compute the Onsager dissociation rate (exciton dissociation) on an interface induced by a piezoelectric potential in an inorganicorganic hybrid p-n junction system (ZnO + (poly(p-phenylene vinylene)); PPV). When a positive piezoelectric potential is created at the interface region owing to the deformation of the system, free electrons accumulate at the interface. Hence, screening effects are observed. It is assumed that the electron layer formed at the interface then attracts free holes from the p-type PPV region, which leads to exciton formation, possibly via the Langevin recombination process. The increased exciton density can then contribute to the Onsager dissociation rate, which is maximum around the interface. This paper focuses on the role of piezoelectric effects in promoting exciton formation at the interface and its relation with the exciton dissociation rate.


2013 ◽  
Vol 750-752 ◽  
pp. 776-781
Author(s):  
Yun Fei Wang ◽  
Yun Kai Li ◽  
Ming Xia

For the purpose of studying vacancy effect on physics and mechanics property, authors advance a method of calculating mono-vacancy cell valence construction, and get 5 phase construction factors nAF andα on electron layer. It indicates that vacancy increase electrical resistivity and intensity, and decrease plasticity, which are consistent with experiments. The paper open out the relation between vacancy and physics and mechanics property on electron layer.


2013 ◽  
Vol 58 (5) ◽  
pp. 770-773 ◽  
Author(s):  
Yu. A. Kovalenko ◽  
A. S. Chikhachev
Keyword(s):  
Ion Flow ◽  

2013 ◽  
Vol 30 (2) ◽  
pp. 025201 ◽  
Author(s):  
Yong-Sheng Huang ◽  
Nai-Yan Wang ◽  
Xiu-Zhang Tang ◽  
Yi-Jin Shi ◽  
Shan Zhang

2013 ◽  
Vol 665 ◽  
pp. 283-288 ◽  
Author(s):  
Lalit K. Saini ◽  
Mukesh G. Nayak

A unique evidence of crystalline phase, known as Wigner crystal (WC), is explored in Electron-Hole quantum bilayers (EHBL) by tuning electron layer density independently at zero-temperature and zero-magnetic field. The quantum or dynamical version of Singwi, Tosi, Land and Sjölander (qSTLS) approach is used for obtaining the static density susceptibility. The static density susceptibility plays very important role for exploration of WC phase by showing a divergent behavior at finite wavevector, corresponds to the reciprocal lattice wavevector, during the phase transition from liquid state to WC ground-state. A comparison of present results with a recent results of dependently tunable EHBL system [Phys. Rev. B 66, 205316 (2002)] shows that the onset of Wigner crystallization now occurs at sufficiently lower interlayer spacing by tuning the electron layer density and keeping hole layer density fixed. Further, the prediction of WC phase gets support from the structure factor which exhibits a strong peak near the phase transition point.


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