On the infrared absorption coefficient measurement of thick heavily Zn doped GaAs using spectrally resolved modulated photothermal infrared radiometry

2017 ◽  
Vol 122 (13) ◽  
pp. 135109 ◽  
Author(s):  
M. Pawlak ◽  
S. Pal ◽  
A. Ludwig ◽  
A. D. Wieck
2019 ◽  
Vol 173 ◽  
pp. 73-86 ◽  
Author(s):  
Ana L. Delgado ◽  
Valeria A. Guinder ◽  
Ana I. Dogliotti ◽  
Georgina Zapperi ◽  
Paula D. Pratolongo

2018 ◽  
Vol 53 (2) ◽  
pp. 160-171 ◽  
Author(s):  
Ji-Hyoung Kim ◽  
Sang-Woo Kim ◽  
John A. Ogren ◽  
Patrick J. Sheridan ◽  
Soon-Chang Yoon ◽  
...  

2018 ◽  
Vol 27 (03) ◽  
pp. 1850030 ◽  
Author(s):  
Junsheng Li ◽  
Youwen Liu ◽  
Huijie Zhang ◽  
Liangzun Tang ◽  
Chongjun He

By measuring the ultraviolet-light-induced absorption in Sc-, Mg- and Zn-doped near-stoichiometric lithium niobate (LiNbO[Formula: see text], we find that the steady-state ultraviolet-light-induced absorption coefficient changes with respect to the doping concentration. There is a strong ultraviolet-light-induced absorption when doping concentration is below its photorefractive threshold and a really weak absorption when the crystal is highly doped. We also use OH[Formula: see text] infrared absorption spectra and the transmitted light spot distortion method to verify the result. Thus, we can determine if the doping level in these doped near-stoichiometric LiNbO3 crystals is above or below their photorefractive threshold by measuring the ultraviolet-light-induced absorption.


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