Electrical properties and structural transition of Ge2Sb2Te5 adjusted by rare-earth element Gd for nonvolatile phase-change memory

2018 ◽  
Vol 124 (14) ◽  
pp. 145107 ◽  
Author(s):  
Yongjin Chen ◽  
Nianke Chen ◽  
Bin Chen ◽  
Qing Zhang ◽  
Xianbin Li ◽  
...  
Keyword(s):  
Rare Earth ◽  
Electrical Properties ◽  
Phase Change ◽  
Rare Earth Element ◽  
Earth Element ◽  
Structural Transition ◽  
Phase Change Memory ◽  
Change Memory

Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe–Sb2Te3 chalcogenide semiconductors

2017 ◽  
Vol 51 (2) ◽  
pp. 146-152 ◽  
Author(s):  
A. A. Sherchenkov ◽  
S. A. Kozyukhin ◽  
P. I. Lazarenko ◽  
A. V. Babich ◽  
N. A. Bogoslovskiy ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Phase Change ◽  
Phase Change Memory ◽  
Transport Mechanisms ◽  
Chalcogenide Semiconductors ◽  
Change Memory

Investigation of SET and RESET States Resistance in Ohmic Regime for Phase-Change Memory

2008 ◽  
Vol 1072 ◽  
Author(s):  
Semyon D. Savransky ◽  
Ilya V Karpov
Keyword(s):  
Electrical Properties ◽  
Contact Resistance ◽  
Phase Change ◽  
Phase Change Memory ◽  
Activation Energies ◽  
New Technique ◽  
Specific Contact Resistance ◽  
Bulk Conductivity ◽  
Specific Contact ◽  
Change Memory

ABSTRACTNew technique to separate bulk and interface electrical properties of polycrystalline and glassy Ge2Sb2Te5 (GST) in phase-change memory (PCM) devices is proposed. PCM with different GST thicknesses are measured. The average activation energies for bulk conductivity are 0.37 eV and 0.09 eV as well as bulk resistivities are about μOhm*cm2 and 20 μOhm*cm. The contact barriers is 0.07eV and specific contact resistance is about 0.3 μOhm*cm2 in studied PCM devices.It is discovered that bulk resistivities for both SET and RESET states in PCM obey Meyer-Neldel rule with almost identical isokinetic temperatures 335K − 340K. This information is discussed in terms of GST structure.

Electrical properties and crystal structures of nitrogen-doped Ge2Sb2Te5 thin film for phase change memory

2004 ◽  
Vol 469-470 ◽  
pp. 322-326 ◽  
Author(s):  
Suk Min Kim ◽  
Min Jung Shin ◽  
Doo Jin Choi ◽  
K.N. Lee ◽  
S.K. Hong ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Phase Change ◽  
Crystal Structures ◽  
Phase Change Memory ◽  
Nitrogen Doped ◽  
Change Memory

Rare Earth Doping Brings Thermal Stability Improvement in Zn0.15Sb0.85 Alloy for Phase Change Memory Application

2019 ◽  
Vol 48 (7) ◽  
pp. 4362-4367
Author(s):  
Hua Zou ◽  
Yifeng Hu ◽  
Xiaoqin Zhu ◽  
Yuemei Sun ◽  
Fengfei Wang ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Rare Earth ◽  
Phase Change ◽  
Phase Change Memory ◽  
Rare Earth Doping ◽  
Change Memory

Improved thermal and electrical properties of nitrogen-doped Ge-rich Ge3Sb2Te5 for phase-change memory application

2012 ◽  
Vol 71 ◽  
pp. 98-100 ◽  
Author(s):  
Limin Cheng, ◽  
Liangcai Wu ◽  
Zhitang Song ◽  
Feng Rao ◽  
Cheng Peng ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Phase Change ◽  
Phase Change Memory ◽  
Nitrogen Doped ◽  
Thermal And Electrical Properties ◽  
Change Memory

scholarly journals Influence of indium doping on the electrical properties of Ge2Sb2Te5thin films for nonvolatile phase change memory devices

2016 ◽  
Vol 690 ◽  
pp. 012006 ◽  
Author(s):  
P I Lazarenko ◽  
A A Sherchenkov ◽  
S A Kozyukhin ◽  
A V Babich ◽  
H P Nguen ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Devices ◽  
Indium Doping ◽  
Change Memory

Improved Thermal Stability and Electrical Properties for Al-Sb-Te Based Phase-Change Memory

2012 ◽  
Vol 1 (2) ◽  
pp. P38-P41 ◽  
Author(s):  
C. Peng ◽  
L. Wu ◽  
F. Rao ◽  
Z. Song ◽  
P. Yang ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Electrical Properties ◽  
Phase Change ◽  
Phase Change Memory ◽  
Change Memory

ELECTRICAL PROPERTIES OF HEAVILY DOPED FLUORITE-STRUCTURED BaF2:RF3(R = RARE EARTH ELEMENT, Y, Sc) SINGLE CRYSTALS

2000 ◽  
Author(s):  
V. TRNOVCOVÁ ◽  
N. L SOROKIN ◽  
P. P. FEDOROV ◽  
E. A. KRIVANDINA ◽  
T. ŠRÁMKOVÁ ◽  
...  
Keyword(s):  
Rare Earth ◽  
Electrical Properties ◽  
Single Crystals ◽  
Rare Earth Element ◽  
Earth Element ◽  
Heavily Doped
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