Investigation of SET and RESET States Resistance in Ohmic Regime for Phase-Change Memory

2008 ◽  
Vol 1072 ◽  
Author(s):  
Semyon D. Savransky ◽  
Ilya V Karpov
Keyword(s):  
Electrical Properties ◽  
Contact Resistance ◽  
Phase Change ◽  
Phase Change Memory ◽  
Activation Energies ◽  
New Technique ◽  
Specific Contact Resistance ◽  
Bulk Conductivity ◽  
Specific Contact ◽  
Change Memory

ABSTRACTNew technique to separate bulk and interface electrical properties of polycrystalline and glassy Ge2Sb2Te5 (GST) in phase-change memory (PCM) devices is proposed. PCM with different GST thicknesses are measured. The average activation energies for bulk conductivity are 0.37 eV and 0.09 eV as well as bulk resistivities are about μOhm*cm2 and 20 μOhm*cm. The contact barriers is 0.07eV and specific contact resistance is about 0.3 μOhm*cm2 in studied PCM devices.It is discovered that bulk resistivities for both SET and RESET states in PCM obey Meyer-Neldel rule with almost identical isokinetic temperatures 335K − 340K. This information is discussed in terms of GST structure.

scholarly journals A contact resistance model for scanning probe phase-change memory

2014 ◽  
Vol 24 (3) ◽  
pp. 037001 ◽  
Author(s):  
Lei Wang ◽  
David Wright ◽  
Mustafa Aziz ◽  
Jin Ying ◽  
Guo Wei Yang
Keyword(s):  
Contact Resistance ◽  
Phase Change ◽  
Phase Change Memory ◽  
Scanning Probe ◽  
Resistance Model ◽  
Change Memory

scholarly journals Comparison of Electrical Properties of Ohmic Contact Realized on p-Type 4H-SiC

2008 ◽  
Vol 600-603 ◽  
pp. 639-642
Author(s):  
Duy Minh Nguyen ◽  
Christophe Raynaud ◽  
Mihai Lazar ◽  
Heu Vang ◽  
Dominique Planson
Keyword(s):  
Surface Roughness ◽  
Electrical Properties ◽  
Contact Resistance ◽  
Carrier Mobility ◽  
Ohmic Contacts ◽  
Series Resistance ◽  
Specific Contact Resistance ◽  
Specific Contact ◽  
P Type ◽  
Post Implantation

N+ 4H-SiC commercial substrates with n-type epilayers have been used to realize bipolar diodes and TLM structures. The p-type emitter of diodes was realized by Al implantations followed by a post-implantation annealing with or without a graphite capping layer. Ohmic contacts were formed by depositing Ti/Ni on the backside and Ni/Al on the topside of the wafer. It appears that capping the sample during the annealing reduces considerably the surface roughness and the specific contact resistance. Sheet resistance and specific contact resistance as low as 2kΩ/□ and respectively 1.75×10-4 Ωcm² at 300 K have been obtained. I-V measurements as a function of temperature have been performed from ~100 to ~500 K. The variations of the series resistance vs. temperature can be explained by the freeze-out of carriers and by the variation of carrier mobility.

Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe–Sb2Te3 chalcogenide semiconductors

2017 ◽  
Vol 51 (2) ◽  
pp. 146-152 ◽  
Author(s):  
A. A. Sherchenkov ◽  
S. A. Kozyukhin ◽  
P. I. Lazarenko ◽  
A. V. Babich ◽  
N. A. Bogoslovskiy ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Phase Change ◽  
Phase Change Memory ◽  
Transport Mechanisms ◽  
Chalcogenide Semiconductors ◽  
Change Memory

Electrical properties and crystal structures of nitrogen-doped Ge2Sb2Te5 thin film for phase change memory

2004 ◽  
Vol 469-470 ◽  
pp. 322-326 ◽  
Author(s):  
Suk Min Kim ◽  
Min Jung Shin ◽  
Doo Jin Choi ◽  
K.N. Lee ◽  
S.K. Hong ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Phase Change ◽  
Crystal Structures ◽  
Phase Change Memory ◽  
Nitrogen Doped ◽  
Change Memory

Aluminum Implantation in 4H-SiC: Physical and Electrical Properties

2013 ◽  
Vol 740-742 ◽  
pp. 581-584 ◽  
Author(s):  
Jean François Michaud ◽  
X. Song ◽  
J. Biscarrat ◽  
F. Cayrel ◽  
E. Collard ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Contact Resistance ◽  
Total Dose ◽  
Room Temperature ◽  
Microscopy Study ◽  
Specific Contact Resistance ◽  
Scanning Capacitance Microscopy ◽  
Aluminum Implantation ◽  
Specific Contact

For this study, 4H SiC samples were implanted with aluminum at room temperature, 200°C and 600°C with different energies, ranging from 30 to 380 keV, for a total dose of 4x1015 cm 2, to create a “box-like” profile. To activate dopants, samples were then isochronally annealed from 1650°C to 1850°C during 30min. The lowest specific contact resistance achieved, evaluated to 1.3x10-5 Ω.cm2, has been obtained for the 200°C implanted sample annealed at 1850°C. For this condition, Scanning Capacitance Microscopy study has proved that the dopant activity is quite homogeneous in opposition with the samples implanted at RT and 600°C.

Improved thermal and electrical properties of nitrogen-doped Ge-rich Ge3Sb2Te5 for phase-change memory application

2012 ◽  
Vol 71 ◽  
pp. 98-100 ◽  
Author(s):  
Limin Cheng, ◽  
Liangcai Wu ◽  
Zhitang Song ◽  
Feng Rao ◽  
Cheng Peng ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Phase Change ◽  
Phase Change Memory ◽  
Nitrogen Doped ◽  
Thermal And Electrical Properties ◽  
Change Memory

scholarly journals Influence of indium doping on the electrical properties of Ge2Sb2Te5thin films for nonvolatile phase change memory devices

2016 ◽  
Vol 690 ◽  
pp. 012006 ◽  
Author(s):  
P I Lazarenko ◽  
A A Sherchenkov ◽  
S A Kozyukhin ◽  
A V Babich ◽  
H P Nguen ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Devices ◽  
Indium Doping ◽  
Change Memory

Improved Thermal Stability and Electrical Properties for Al-Sb-Te Based Phase-Change Memory

2012 ◽  
Vol 1 (2) ◽  
pp. P38-P41 ◽  
Author(s):  
C. Peng ◽  
L. Wu ◽  
F. Rao ◽  
Z. Song ◽  
P. Yang ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Electrical Properties ◽  
Phase Change ◽  
Phase Change Memory ◽  
Change Memory

scholarly journals Micro- and nanoscale electrical characterization of large-area graphene transferred to functional substrates

2013 ◽  
Vol 4 ◽  
pp. 234-242 ◽  
Author(s):  
Gabriele Fisichella ◽  
Salvatore Di Franco ◽  
Patrick Fiorenza ◽  
Raffaella Lo Nigro ◽  
Fabrizio Roccaforte ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Contact Resistance ◽  
Sheet Resistance ◽  
Flexible Electronics ◽  
Structural Integrity ◽  
Chemical Vapour ◽  
Specific Contact Resistance ◽  
Large Area ◽  
Conductive Atomic Force Microscopy ◽  
Specific Contact

Chemical vapour deposition (CVD) on catalytic metals is one of main approaches for high-quality graphene growth over large areas. However, a subsequent transfer step to an insulating substrate is required in order to use the graphene for electronic applications. This step can severely affect both the structural integrity and the electronic properties of the graphene membrane. In this paper, we investigated the morphological and electrical properties of CVD graphene transferred onto SiO2 and on a polymeric substrate (poly(ethylene-2,6-naphthalene dicarboxylate), briefly PEN), suitable for microelectronics and flexible electronics applications, respectively. The electrical properties (sheet resistance, mobility, carrier density) of the transferred graphene as well as the specific contact resistance of metal contacts onto graphene were investigated by using properly designed test patterns. While a sheet resistance R sh ≈ 1.7 kΩ/sq and a specific contact resistance ρc ≈ 15 kΩ·μm have been measured for graphene transferred onto SiO2, about 2.3× higher R sh and about 8× higher ρc values were obtained for graphene on PEN. High-resolution current mapping by torsion resonant conductive atomic force microscopy (TRCAFM) provided an insight into the nanoscale mechanisms responsible for the very high ρc in the case of graphene on PEN, showing a ca. 10× smaller “effective” area for current injection than in the case of graphene on SiO2.

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