Improving the Ionic Conductivity of the LLZO–LZO Thin Film through Indium Doping

A solid-state electrolyte with an ionic conductivity comparable to that of a liquid electrolyte is demanded of all-solid-state lithium-ion batteries. Li7La3Zr2O12 (LLZO) is considered to be a promising candidate due to its good thermal stability, high ionic conductivity, and wide electrochemical window. However, the synthesis of a stable cubic-phase LLZO thin film with enhanced densification at a relatively low thermal treatment temperature is yet to be developed. Indium is predicted to be a possible dopant to stabilize the cubic-phase LLZO (c-LLZO). Herein, via a nanolayer stacking process, a LLZO–Li2CO3–In2O3 multilayer solid electrolyte precursor was obtained. After thermal annealing at different temperatures, the effects of indium doping on the formation of c-LLZO and the ionic conductivities of the prepared LLZO–LZO thin film were systematically investigated. The highest ionic conductivity of 9.6 × 10−6 S·cm–1 was obtained at an annealing temperature of 800 °C because the incorporation of indium promoted the formation of c-LLZO and the highly conductive LLZO–LZO interfaces. At the end, a model of LLZO–LZO interface-enhancing ionic conductivity was proposed. This work provides a new approach for the development of low-temperature LLZO-based, solid-state thin-film batteries.

Impact of boron and indium doping on the structural, electronic and optical properties of SnO2

Tin dioxide (SnO2), due to its non-toxicity, high stability and electron transport capability represents one of the most utilized transition metal oxides in many optoelectronic devices such as photocatalytic devices, photovoltaics (PVs) and light-emitting diodes (LEDs). However, its wide bandgap reduces its charge carrier mobility and its photocatalytic activity. Doping with various elements is an efficient and low-cost way to decrease SnO2 band gap and maximize photocatalytic applications' potential. Here, we apply density functional theory calculations to examine the effect of p-type doping with B and In of SnO2 on its electronic and optical properties. Calculation predict the creation of shallow energy states in the band gap, near the valence band, when the dopant (B or In) is in interstitial position. In the case of substitutional doping, a significant decrease of the band gap is calculated. We also investigate the effect of doping on the surface sites of SnO2. We find that B incorporation in the (110) does not alter the gap while In causes a notable decrease. The present work highlights the significance of boron and indium doping in SnO2 both for solar cells and photocatalytic applications.

The effect of indium doping on the hydrogen evolution performance of g-C3N4 based photocatalysts

Doping graphite carbon nitride (g-C3N4) with indium ions in an unique quasi-interlayer fashion is effective to improve its visible light photocatalytic performance towards hydrogen evolution via water splitting.

Structural and electronic insight into the effect of indium doping on the photocatalytic performance of TiO2 for CO2 conversion

The photocatalytic conversion of CO2 to fuels and useful chemicals is a valuable artificial photosynthesis approach that simultaneously addresses the valorization of CO2 emissions and the storage of solar energy....